|
Volumn 2, Issue 1, 2014, Pages 98-108
|
A simple approach to the fabrication of fluorine-doped zinc oxide thin films by atomic layer deposition at low temperatures and an investigation into the growth mode
|
Author keywords
[No Author keywords available]
|
Indexed keywords
FIELD EMISSION SCANNING ELECTRON MICROSCOPY;
FLUORINE CONCENTRATIONS;
LOW DEPOSITION TEMPERATURE;
LOW-TEMPERATURE FABRICATION;
OXYGEN-RELATED DEFECTS;
STRUCTURAL AND MORPHOLOGICAL PROPERTIES;
WIDE-ANGLE X-RAY DIFFRACTION;
ZINC OXIDE THIN FILMS;
ATOMIC LAYER DEPOSITION;
DEFECTS;
DEIONIZED WATER;
DEPOSITION;
FIELD EMISSION MICROSCOPES;
GRAIN GROWTH;
OXYGEN;
SEMICONDUCTOR DOPING;
THIN FILMS;
X RAY DIFFRACTION;
ZINC OXIDE;
FLUORINE;
|
EID: 84889076570
PISSN: 20507534
EISSN: 20507526
Source Type: Journal
DOI: 10.1039/c3tc31478b Document Type: Article |
Times cited : (79)
|
References (36)
|