Chemical effects on the optical band-gap of heavily doped ZnO: MIII (M=Al,Ga,In): An investigation by means of photoelectron spectroscopy, optical measurements under pressure, and band structure calculations

Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 19, 2009, Pages

  Sans, J A ^a   Sanchez Royo J F ^a   Segura, A ^a   Tobias, G ^b   Canadell, E ^c  

^a Instituto Univ de Materiales y Nanotecnología   (Spain)

^b UNIVERSITY OF OXFORD   (United Kingdom)

^c UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 65649153407     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.195105     Document Type: Article

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