Defect structure and chemical bonding of p-type ZnO:Sb thin films prepared by pulsed laser deposition

Semiconductor Science and Technology

Volumn 29, Issue 11, 2014, Pages

  Santos Ortiz, Reinaldo ^a   Jha, Jitendra Kumar ^a   Sun, Wei ^a   Nyandoto, Gilbert ^a   Du, Jincheng ^a   Shepherd, Nigel D ^a  

^a Center for Advanced Research and Technology   (United States)

Author keywords

acceptor complex; DFT; p type; semiconductors; thin films; ZnO

Indexed keywords

ANNEALING; ANTIMONY; BINDING ENERGY; CHEMICAL BONDS; DEFECT DENSITY; DEFECTS; DENSITY FUNCTIONAL THEORY; DEPOSITION; PULSED LASER DEPOSITION; PULSED LASERS; SEMICONDUCTING FILMS; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; THIN FILMS; X RAY DIFFRACTION; ZINC OXIDE;

ACCEPTOR COMPLEX; CHEMICAL BONDINGS; ELECTRICAL CONDUCTIVITY; LOCAL COORDINATION; LOCAL ENVIRONMENTS; OXYGEN INCORPORATION; P TYPE CONDUCTIVITY; P-TYPE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84908018916     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/29/11/115019     Document Type: Article

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