A comparative study of the photoluminescence and conduction mechanisms of low temperature pulsed laser deposited and atomic layer deposited zinc oxide thin films

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 11, 2010, Pages 2487-2491

  Kuo, Fang Ling ^a   Lin, Ming Te ^a   Mensah, Benedict A ^a   Scharf, Thomas W ^a   Shepherd, Nigel D ^a  

^a UNIVERSITY OF NORTH TEXAS   (United States)

Author keywords

atomic layer deposition; conductivity; defects; photoluminescence; pulsed laser deposition; ZnO

Indexed keywords

ANNEALING TREATMENTS; ATOMIC LAYER DEPOSITED; BEFORE AND AFTER; COMPARATIVE STUDIES; CONDUCTION MECHANISM; CONDUCTIVITY; DEFECT EMISSION; ELECTROOPTICAL PROPERTIES; EMISSION BANDS; INTERSTITIALS; LOW TEMPERATURES; OPTOELECTRONIC APPLICATIONS; OXYGEN VACANCY CONCENTRATION; PL INTENSITY; POST DEPOSITION ANNEALING; POTENTIAL IMPACTS; PULSED LASER; ROOM-TEMPERATURE PHOTOLUMINESCENCE; ZINC OXIDE THIN FILMS; ZNO;

ANNEALING; ARGON; ARGON LASERS; ATOMIC LAYER DEPOSITION; ATOMS; DEFECTS; DEPOSITION; ELECTRIC PROPERTIES; GLASS LASERS; OPTICAL PROPERTIES; OXIDE FILMS; OXYGEN; OXYGEN VACANCIES; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; THIN FILMS; ZINC; ZINC OXIDE;

PULSED LASERS;

EID: 78349290028     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201026152     Document Type: Article

References (35)

1. S. H. Yoon, and, D. Kim, Mater. Res. Soc. Symp. Proc. 966 (0966), T07-07 (2007).
2. L. Ion, C. Tazlaoanu, G. Socol, L. Magherusan, I. Enculescu, D. Bazavan, I. Mihailescu, and, S. Antohe, Mater. Res. Soc. Symp. Proc. 1013 1013Z04-09 (2007).
3. A. Ievtushenkoa, G. Lashkareva, V. Lazorenkoa, V. Karpynaa, V. Sichkovskyia, L. Kosyachenkob, V. Sklyarchukb, O. Sklyarchukb, V. Bosyc, F. Korzhinskic, A. Ulyashind, V. Khranovskyye, and, R. Yakimovae, Acta Phys. Pol. A 114, 1123 (2008).
4. P. P. Sahay, J. Mater. Sci. 40, 4383 (2005).
5. D. P. Norton, Y. Heo, L. C. Tien, M. P. Ivill, Y. Li, B. S. Kang, F. Ren, J. Kelly, A. F. Hebard, and, S. Pearton, Mater. Res. Soc. Symp. Proc. 829, B8.5.1-12 (2005).
6. J. S. Zabinski, J. Corneille, S. V. Prasad, N. T. Mcdevitt, and, J. B. Bultman, J. Mater. Sci. 32, 5313 (1997).
7. J. J. Nainaparampil, and, J. S. Zabinski, J. Mater. Res. 16, 3423 (2001).
8. P. F. Carcia, R. S. McLean, M. H. Reilly, I. Malajovich, K. G. Sharp, S. Agrawal, and, G. Nunes, Mater. Res. Soc. Symp. Proc. 769, H7.2.1-6 (2003).
9. A. El-Shaer, A. C. Mofor, A. Bakin, M. Kreye, and, A. Waag, Superlattices Microstruct. 38, 265 (2005).
10. X. Li, S. E. Asher, B. M. Keyes, H. R. Moutinho, J. Luther, and, T. J. Coutts, NREL/CP-520-37378 (2005).
11. J. B. Leea, H. J. Kimb, S. G. Kimc, C. S. Hwangb, S. Hongb, Y. H. Shinc, and, N. H. Lee, Thin Solid Films 435, 179 (2003).
12. S. Flickyngerova, K. Shtereva, V. Stenova, D. Hasko, I. Novotny, V. Tvarozek, P. Sutta, and, E. Vavrinsky, Appl. Surf. Sci. 254, 3643 (2008).
13. S. J. Lim, S. Kwon, and, H. Kim, Thin Solid Films 516, 1523 (2008).
14. S. Kwon, S. Bang, S. Lee, S. Jeon, W. Jeong, H. Kim, S. C. Gong, H. J. Chang, H. Park, and, H. Jeon, Semicond. Sci. Technol. 24, 035015 (2009).
15. J. W. Elam, G. Xiong, C. Y. Han, H. H. Wang, J. P. Birrell, J. N. Hryn, M. J. Pellin, J. F. Poco, and, J. H. Stcher, Mater. Res. Soc. Symp. Proc. 876E, R12.6.1-5 (2005).
16. M. Oh, S. Kim, S. Park, and, T. Seong, Superlattices Microstruct. 39, 130 (2006).
17. Y. Y. Villanueva, D. Liu, and, P. T. Cheng, Thin Solid Films 501, 366-369 (2006).
18. C. Hirose, Y. Matsumoto, Y. Yamamoto, and, H. Koinuma, Appl. Phys. A 79, 807 (2004).
19. M. Tammenmaa, T. Koskinen, L. Hiltunen, L. Niinistö, and, M. Leskelä, Thin Solid Films 124, 125 (1985).
20. L. Hiltunen, M. Leskelä, M. Mäkelä, and, L. Niinistö, Acta Chem. Scand. A 41, 548 (1987).
21. V. Lujala, J. Skarp, M. Tammenmaa, and, T. Suntola, Appl. Surf. Sci. 82/83, 34 (1994).
22. J. Lim, and, C. Lee, Thin Solid Films 515, 3335 (2007).
23. G. L. Doll, B. A. Mensah, H. Mohseni, and, T. W. Scharf, J. Therm. Spray Technol. 19, 510 (2010).
24. L. Niinistö, M. Nieminen, J. Päiväsaari, J. Niinistö, M. Putkonen, and, M. Nieminen, Phys. Status Solidi A 201 (7), 1441 (2004).
25. Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doǧan, V. Avrutin, S. J. Cho, and, H. Morko, J. Appl. Phys. 98, 041301(1-103) (2005).
26. A. L. Patterson, Phys. Rev. 56, 978 (1939).
27. E. Guziewicz, I. A. Kowalik, M. Godlewski, K. Kopalko, V. Osinniy, A. Wójcik, S. Yatsunenko, E. Łusakowska, W. Paszkowicz, and, M. Guziewicz, J. Appl. Phys. 103, 033515(1-6) (2008).
28. F. Leitera, H. Alvesa, D. Pfisterera, N. G. Romanovb, D. M. Hofmanna, and, B. K. Meyer, Phys. B 340, 201 (2003).
29. B. Guo, Z. R. Qiu, and, K. S. Wong, Appl. Phys. Lett. 82, 2290 (2003).
30. K. Vanheusden, C. H. Seagera, W. L. Warren, D. R. Tallant, J. Caruso, M. J. Hampden-Smithb, and, T. T. Kodasb, J. Lumin. 75, 11 (1997).
31. C. Richard, A. Catlow, S. A. French, A. A. Sokol, A. A. Al-Sunaidi, and, S. M. Woodley, J. Comput. Chem. 13, 2234 (2008).
32. A. E. Rakhshani, A. Bumajdad, and, J. Kokaj, Appl. Phys. A 89, 923 (2007).
33. Y. Sun, J. B. Ketterson, and, G. K. L. Wong, Appl. Phys. Lett. 77, 2322 (2000).
34. D. H. Zhang, Z. Y. Xue, and, Q. P. Wang, J. Phys. D 35, 2837 (2002).
35. F. D. Auret, S. A. Goodman, M. J. Legodi, W. E. Meyer, and, D. C. Look, Appl. Phys. Lett. 80, 1340 (2002).