Post-annealing of p-type ZnO:Sb thin film grown by pulsed laser deposition

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7603, Issue , 2010, Pages

  Yata, Y ^a   Sakano, T ^a   Obara, M ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

P type; PLD; Post annealing; Sb doping; Temperature dependence; ZnO

Indexed keywords

AS-GROWN; HIGH TEMPERATURE; LOW TEMPERATURES; N-TYPE CONDUCTIVITY; P TYPE ZNO; P TYPE ZNO THIN FILM; P-TYPE; P-TYPE CONDUCTIVITY; POST ANNEALING; SB DOPING; TEMPERATURE RANGE; ZNO; ZNO THIN FILM;

ANTIMONY COMPOUNDS; DEPOSITION; GALLIUM ALLOYS; GALLIUM NITRIDE; HOLE CONCENTRATION; LATTICE MISMATCH; METALLIC FILMS; OPTICAL FILMS; PULSED LASER DEPOSITION; PULSED LASERS; TEMPERATURE DISTRIBUTION; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

ANNEALING;

EID: 77951715684     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.840973     Document Type: Conference Paper

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