SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 105, Issue 14, 2014, Pages

Bias-temperature instability in single-layer graphene field-effect transistors

(7) Illarionov, Yu Yu a,d Smith, A D b Vaziri, S b Ostling, M b Mueller, T a Lemme, M C c Grasser, T a

a VIENNA UNIVERSITY OF TECHNOLOGY (Austria)

b ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

c UNIVERSITY OF SIEGEN (Germany)

d IOFFE INSTITUTE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS TEMPERATURE INSTABILITY; GRAPHENE FIELD-EFFECT TRANSISTORS; SINGLE LAYER;

EID: 84907887083 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4897344 Document Type: Article

Times cited : (44)

References (27)

1
- 33847690144
- A. Geim and K. Novoselov, Nat. Mater. 6, 183 (2007). 10.1038/nmat1849
- (2007) Nat. Mater. , vol.6 , pp. 183
- Geim, A.¹ Novoselov, K.²

2
- 7444220645
- K. Novoselov, A. Geim, S. Morozov, D. Jiang, Y. Zhang, S. Dubonos, I. Grigorieva, and A. Firsov, Science 306, 666 (2004). 10.1126/science.1102896
- (2004) Science , vol.306 , pp. 666
- Novoselov, K.¹ Geim, A.² Morozov, S.³ Jiang, D.⁴ Zhang, Y.⁵ Dubonos, S.⁶ Grigorieva, I.⁷ Firsov, A.⁸

3
- 77956212768
- V. Dorgan, M.-H. Bae, and E. Pop, Appl. Phys. Lett. 97, 082112 (2010). 10.1063/1.3483130
- (2010) Appl. Phys. Lett. , vol.97 , pp. 082112
- Dorgan, V.¹ Bae, M.-H.² Pop, E.³

4
- 84879505639
- S. Vaziri, G. Lupina, A. Paussa, A. D. Smith, C. Henkel, G. Lippert, J. Dabrowski, W. Mehr, M. Östling, and M. Lemme, Solid-State Electron. 84, 185 (2013). 10.1016/j.sse.2013.02.008
- (2013) Solid-State Electron. , vol.84 , pp. 185
- Vaziri, S.¹ Lupina, G.² Paussa, A.³ Smith, A.D.⁴ Henkel, C.⁵ Lippert, G.⁶ Dabrowski, J.⁷ Mehr, W.⁸ Östling, M.⁹ Lemme, M.¹⁰

5
- 34547841212
- M. Lemme, T. Echtermeyer, M. Baus, and H. Kurz, IEEE Electron Device Lett. 28, 282-284 (2007). 10.1109/LED.2007.891668
- (2007) IEEE Electron Device Lett. , vol.28 , pp. 282-284
- Lemme, M.¹ Echtermeyer, T.² Baus, M.³ Kurz, H.⁴

6
- 60349097486
- Y.-M. Lin, K. Jenkins, A. Valdes-Garcia, J. Small, D. Farmer, and P. Avouris, Nano Lett. 9, 422 (2009). 10.1021/nl803316h
- (2009) Nano Lett. , vol.9 , pp. 422
- Lin, Y.-M.¹ Jenkins, K.² Valdes-Garcia, A.³ Small, J.⁴ Farmer, D.⁵ Avouris, P.⁶

7
- 67649304648
- J. S. Moon, D. Curtis, M. Hu, D. Wong, C. McGuire, P. Campbell, G. Jernigan, J. Tedesco, B. VanMil, R. Myers-Ward, C. Eddy, and D. Gaskill, IEEE Electron Device Lett. 30, 650 (2009). 10.1109/LED.2009.2020699
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 650
- Moon, J.S.¹ Curtis, D.² Hu, M.³ Wong, D.⁴ McGuire, C.⁵ Campbell, P.⁶ Jernigan, G.⁷ Tedesco, J.⁸ Vanmil, B.⁹ Myers-Ward, R.¹⁰ Eddy, C.¹¹ Gaskill, D.¹²

8
- 84864239278
- I. Meric, C. Dean, A. Young, J. Hone, P. Kim, and K. Shepard, in IEDM (2010), pp. 23.2.1-23.2.4.
- (2010) IEDM , pp. 2321-2324
- Meric, I.¹ Dean, C.² Young, A.³ Hone, J.⁴ Kim, P.⁵ Shepard, K.⁶

9
- 79957614125
- S.-J. Han, Z. Chen, A. Bol, and Y. Sun, IEEE Electron Device Lett. 32, 812 (2011). 10.1109/LED.2011.2131113
- (2011) IEEE Electron Device Lett. , vol.32 , pp. 812
- Han, S.-J.¹ Chen, Z.² Bol, A.³ Sun, Y.⁴

10
- 84863302794
- M. Engel, M. Steiner, A. Lombardo, A. Ferrari, H. Loehneysen, P. Avouris, and R. Krupke, Nat. Commun. 3, 906 (2012). 10.1038/ncomms1911
- (2012) Nat. Commun. , vol.3 , pp. 906
- Engel, M.¹ Steiner, M.² Lombardo, A.³ Ferrari, A.⁴ Loehneysen, H.⁵ Avouris, P.⁶ Krupke, R.⁷

11
- 84876059579
- S. Vaziri, G. Lupina, C. Henkel, A. Smith, M. Ostling, J. Dabrowski, G. Lippert, W. Mehr, and M. Lemme, Nano Lett. 13, 1435 (2013). 10.1021/nl304305x
- (2013) Nano Lett. , vol.13 , pp. 1435
- Vaziri, S.¹ Lupina, G.² Henkel, C.³ Smith, A.⁴ Ostling, M.⁵ Dabrowski, J.⁶ Lippert, G.⁷ Mehr, W.⁸ Lemme, M.⁹

12
- 84861659653
- H. Yang, J. Heo, S. Park, H. J. Song, D. H. Seo, K.-E. Byun, P. Kim, I. Yoo, H.-J. Chung, and K. Kim, Science 336, 1140 (2012). 10.1126/science.1220527
- (2012) Science , vol.336 , pp. 1140
- Yang, H.¹ Heo, J.² Park, S.³ Song, H.J.⁴ Seo, D.H.⁵ Byun, K.-E.⁶ Kim, P.⁷ Yoo, I.⁸ Chung, H.-J.⁹ Kim, K.¹⁰

13
- 84879958097
- A. Di Bartolomeo, S. Santandrea, F. Giubileo, F. Romeo, M. Petrosino, R. Citro, P. Barbara, G. Lupina, T. Schroeder, and A. Rubino, Diamond Relat. Mater. 38, 19 (2013). 10.1016/j.diamond.2013.06.002
- (2013) Diamond Relat. Mater. , vol.38 , pp. 19
- Bartolomeo, A.D.¹ Santandrea, S.² Giubileo, F.³ Romeo, F.⁴ Petrosino, M.⁵ Citro, R.⁶ Barbara, P.⁷ Lupina, G.⁸ Schroeder, T.⁹ Rubino, A.¹⁰

14
- 77149140818
- S. Imam, S. Sabri, and T. Szkopek, Micro Nano Lett. 5, 37 (2010). 10.1049/mnl.2009.0052
- (2010) Micro Nano Lett. , vol.5 , pp. 37
- Imam, S.¹ Sabri, S.² Szkopek, T.³

15
- 79959993841
- B. Liu, M. Yang, C. Zhan, Y. Yang, and Y.-C. Yeo, in VLSI Symposium (2011), pp. 22-24.
- (2011) VLSI Symposium , pp. 22-24
- Liu, B.¹ Yang, M.² Zhan, C.³ Yang, Y.⁴ Yeo, Y.-C.⁵

16
- 84862016676
- W. Liu, X. Sun, X. Tran, Z. Fang, Z. Wang, F. Wang, L. Wu, J. Zhang, J. Wei, H. Zhu, and H. Yu, IEEE Trans. Device Mater. Reliab. 12, 478 (2012). 10.1109/TDMR.2012.2190414
- (2012) IEEE Trans. Device Mater. Reliab. , vol.12 , pp. 478
- Liu, W.¹ Sun, X.² Tran, X.³ Fang, Z.⁴ Wang, Z.⁵ Wang, F.⁶ Wu, L.⁷ Zhang, J.⁸ Wei, J.⁹ Zhu, H.¹⁰ Yu, H.¹¹

17
- 84880883167
- W. Liu, X. Sun, X. Tran, Z. Fang, Z. Wang, F. Wang, L. Wu, J. Zhang, J. Wei, H. Zhu, and H. Yu, IEEE Trans. Electron Devices 60, 2682 (2013). 10.1109/TED.2013.2267541
- (2013) IEEE Trans. Electron Devices , vol.60 , pp. 2682
- Liu, W.¹ Sun, X.² Tran, X.³ Fang, Z.⁴ Wang, Z.⁵ Wang, F.⁶ Wu, L.⁷ Zhang, J.⁸ Wei, J.⁹ Zhu, H.¹⁰ Yu, H.¹¹

18
- 28844506128
- V. Huard, M. Denais, and C. Parthasarathy, Microelectron. Reliab. 46, 1 (2006). 10.1016/j.microrel.2005.02.001
- (2006) Microelectron. Reliab. , vol.46 , pp. 1
- Huard, V.¹ Denais, M.² Parthasarathy, C.³

19
- 79952860803
- D. Ang, Z. Teo, T. Ho, and C. Ng, IEEE Trans. Device Mater. Reliab. 11, 19 (2011). 10.1109/TDMR.2010.2067216
- (2011) IEEE Trans. Device Mater. Reliab. , vol.11 , pp. 19
- Ang, D.¹ Teo, Z.² Ho, T.³ Ng, C.⁴

20
- 84880160546
- A. Smith, F. Niklaus, A. Paussa, S. Vaziri, A. Fischer, M. Sterner, F. Forsberg, A. Delin, D. Esseni, P. Palestri, M. Ostling, and M. Lemme, Nano Lett. 13, 3237 (2013). 10.1021/nl401352k
- (2013) Nano Lett. , vol.13 , pp. 3237
- Smith, A.¹ Niklaus, F.² Paussa, A.³ Vaziri, S.⁴ Fischer, A.⁵ Sterner, M.⁶ Forsberg, F.⁷ Delin, A.⁸ Esseni, D.⁹ Palestri, P.¹⁰ Ostling, M.¹¹ Lemme, M.¹²

21
- 84862869282
- I. Meric, C. R. Dean, S.-J. Han, L. Wang, K. A. Jenkins, J. Hone, and K. L. Shepard, in IEDM (2011), pp. 2.1.1-2.1.4.
- (2011) IEDM , pp. 211-214
- Meric, I.¹ Dean, C.R.² Han, S.-J.³ Wang, L.⁴ Jenkins, K.A.⁵ Hone, J.⁶ Shepard, K.L.⁷

22
- 49549115922
- T. Grasser, W. Goes, V. Sverdlov, and B. Kaczer, in IRPS (2007), pp. 268-280.
- (2007) IRPS , pp. 268-280
- Grasser, T.¹ Goes, W.² Sverdlov, V.³ Kaczer, B.⁴

23
- 49149106529
- T. Grasser, B. Kaczer, P. Hehenberger, W. Goes, R. O'Connor, H. Reisinger, W. Gustin, and C. Schlünder, in IEDM (2007), pp. 801-804.
- (2007) IEDM , pp. 801-804
- Grasser, T.¹ Kaczer, B.² Hehenberger, P.³ Goes, W.⁴ O'Connor, R.⁵ Reisinger, H.⁶ Gustin, W.⁷ Schlünder, C.⁸

24
- 84907902012
- IEDM
- T. Grasser, P.-J. Wagner, H. Reisinger, T. Aichinger, G. Pobegen, M. Nelhiebel, and B. Kaczer, in IEDM (2011), pp. 27.4.1-27.4.4.
- (2011) , pp. 2741-2744
- Grasser, T.¹ Wagner, P.-J.² Reisinger, H.³ Aichinger, T.⁴ Pobegen, G.⁵ Nelhiebel, M.⁶ Kaczer, B.⁷

25
- 84907902011
- Y. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Mueller, M. Lemme, and T. Grasser, in Silicon Nanoelectronics Workshop (SNW) (2014), pp. 29-30.
- (2014) Silicon Nanoelectronics Worksho(SNW) , pp. 29-30
- Illarionov, Y.¹ Smith, A.² Vaziri, S.³ Ostling, M.⁴ Mueller, T.⁵ Lemme, M.⁶ Grasser, T.⁷

26
- 0000019521
- A. Stesmans, Phys. Rev. B 61, 8393 (2000). 10.1103/PhysRevB.61.8393
- (2000) Phys. Rev. B , vol.61 , pp. 8393
- Stesmans, A.¹

27
- 84155162964
- T. Grasser, Microelectron. Reliab. 52, 39 (2012). 10.1016/j.microrel.2011.09.002
- (2012) Microelectron. Reliab. , vol.52 , pp. 39
- Grasser, T.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.