SCOPUS 정보 검색 플랫폼

Volumn 38, Issue , 2013, Pages 19-23

Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors

(10) Di Bartolomeo, A a Santandrea, S a Giubileo, F a Romeo, F a Petrosino, M a Citro, R a Barbara, P b Lupina, G c Schroeder, T c Rubino, A a

a UNIVERSITY OF SALERNO (Italy)

b GEORGETOWN UNIVERSITY (United States)

c IHP (Germany)

Author keywords

Keywords Graphene Field effect transistor Specific contact resistivity Transfer characteristic Double dip

Indexed keywords

BACK-GATE; BACK-GATE VOLTAGES; CHANNEL CONDUCTANCE; EFFECT OF DOPING; GATE VOLTAGES; MINIMUM DENSITY; SPECIFIC CONTACT RESISTIVITY; TRANSFER CHARACTERISTICS;

CONTACT RESISTANCE; FIELD EFFECT TRANSISTORS; THRESHOLD VOLTAGE;

GRAPHENE;

EID: 84879958097 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/j.diamond.2013.06.002 Document Type: Article

Times cited : (65)

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