A manufacturable process integration approach for graphene devices

Solid-State Electronics

Volumn 84, Issue , 2013, Pages 185-190

  Vaziri, Sam ^a   Lupina, Grzegorz ^b   Paussa, Alan ^c   Smith, Anderson D ^a   Henkel, Christoph ^a   Lippert, Gunther ^b   Dabrowski, Jarek ^b   Mehr, Wolfgang ^b   Östling, Mikael ^a   Lemme, Max C ^a,d  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b IHP   (Germany)

^c UNIVERSITY OF UDINE   (Italy)

^d UNIVERSITY OF SIEGEN   (Germany)

Author keywords

Dielectric breakdown; Graphene; Hot electrons; Process integration; Quantum capacitance; Transistors

Indexed keywords

ATOMIC LAYER DEPOSITION; CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GRAPHENE DEVICES; GRAPHENE TRANSISTORS; HOT ELECTRONS; LEAKAGE CURRENTS; MICROELECTRONICS; MOS DEVICES; SILICON OXIDES; SILICON WAFERS; TRANSISTORS; WSI CIRCUITS;

ATOMIC LAYER DEPOSITED; GRAPHENE FIELD-EFFECT TRANSISTORS; HOT ELECTRON TRANSISTORS; MANUFACTURABLE PROCESS; PROCESS INTEGRATION; QUANTUM CAPACITANCE; SHALLOW TRENCH ISOLATION; WAFER-SCALE PROCESSING;

GRAPHENE;

EID: 84879505639     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2013.02.008     Document Type: Article

References (34)

1. Neto AHC, Novoselov K. New directions in science and technology: Twodimensional crystals. Rep Prog Phys 2011;74.
2. Novoselov KS, Fal'Ko VI, Colombo L, Gellert PR, Schwab MG, Kim K. A roadmap for graphene. Nature 2012;490:192-200.
3. Grigorenko AN, Polini M, Novoselov KS. Graphene plasmonics. Nat Photonics 2012;6:749-58.
4. Avouris P. Graphene: electronic and photonic properties and devices. Nano Lett 2010;10:4285-94.
5. 2. Appl Phys Lett 2010;97.
6. Lemme MC, Echtermeyer TJ, Baus M, Kurz H. A graphene field-effect device. IEEE Electron Device Lett 2007;28:282-4.
7. Wang H, Hsu A, Wu J, Kong J, Palacios T. Graphene-based ambipolar RF mixers. IEEE Electron Device Lett 2010;31:906-8.
8. Moon JS, Curtis D, Zehnder D, Kim S, Gaskill DK, Jernigan GG, et al. Low-phasenoise graphene FETs in ambipolar RF applications. IEEE Electron Device Lett 2011;32:270-2.
9. Voutilainen M, Seppala ET, Pasanen P, Oksanen M. Graphene and carbon nanotube applications in mobile devices. IEEE Trans Electron Devices 2012;59:2876-87.
10. Rodriguez S, Vaziri S, Ostling M, Rusu A, Alarcon E, Lemme MC, et al. ECS Solid State Lett January 1 2012;1:Q39-41.
11. Schwierz F. Graphene transistors. Nat Nanotechnol Jul 2010;5:487-96.
12. Das S, Appenzeller J. On the importance of bandgap formation in graphene for \analog device applications. IEEE Trans Nanotechnol 2011;10:1093-8.
13. Han MY, Ozyilmaz B, Zhang Y, Kim P. Energy band-gap engineering of graphene nanoribbons. Phys Rev Lett 2007;98:206805-14.
14. Oostinga JB, Heersche HB, Liu X, Morpurgo AF, Vandersypen LMK. Gateinduced insulating state in bilayer graphene devices. Nat Mater 2008;7:151-7. (Pubitemid 351161346)
15. Xia F, Farmer DB, Lin Y-M, Avouris P. Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature. Nano Lett 2010;10:715-8.
16. Szafranek BN, Schall D, Otto M, Neumaier D, Kurz H. Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature. Appl Phys Lett 2010;96. 112103-3.
17. Chen Z, Appenzeller J. Mobility extraction and quantum capacitance impact in high performance graphene field-effect transistor devices. In: Electron devices meeting. IEDM 2008. IEEE International; 2008. p. 1-4.
18. Mehr W, Dabrowski J, Scheytt JC, Lippert G, Xie YH, Lemme MC, et al. Vertical graphene base transistor. IEEE Electron Device Lett 2012;33:691-3.
19. Vaziri S, Lupina G, Henkel C, Smith A.D., Östling M, Dabrowski J, et al. A graphene-based hot electron transistor. ar Xiv:1211.2949; 2012.
20. Engel M, Steiner M, Lombardo A, Ferrari AC, Lähneysen HV, Avouris P, Krupke R. Light-matter interaction in a microcavity-controlled graphene transistor. Nature Communications 2012; 3.
21. Furchi M, Urich A, Pospischil A, Lilley G, Unterrainer K, Detz H, et al. Microcavity-integrated graphene photodetector. Nano Lett 2012;12:2773-7.
22. Lemme MC, Koppens FHL, Falk AL, Rudner MS, Park H, Levitov LS, et al. Gateactivated photoresponse in a graphene pn junction. Nano Lett 2011;11:4134-7.
23. Kim K, Choi JY, Kim T, Cho SH, Chung HJ. A role for graphene in silicon-based semiconductor devices. Nature 2011;479:338-44.
24. Lee Y, Bae S, Jang H, Jang S, Zhu S-E, Sim SH, et al. Wafer-scale synthesis and transfer of graphene films. Nano Lett 2010;10:490-3.
25. Lin YC, Jin C, Lee JC, Jen SF, Suenaga K, Chiu PW. Clean transfer of graphene for isolation and suspension. ACS Nano 2011;5:2362-8.
26. Park HJ, Meyer J, Roth S, Skákalová V. Growth and properties of few-layer graphene prepared by chemical vapor deposition. Carbon 2010;48:1088-94.
27. Hsu A, Wang H, Kim KK, Kong J, Palacios T. Impact of graphene interface quality on contact resistance and RF device performance. IEEE Electron Device Lett 2011;32:1008-10.
28. Liao L, Bai J, Cheng R, Lin Y-C, Jiang S, Qu Y, et al. Sub-100 nm channel length graphene transistors. Nano Lett 2010;10:3952-6.
29. Vaziri S, Östling M, Lemme MC. A hysteresis-free high-k dielectric and contact resistance considerations for graphene field effect transistors. ECS Trans 2011; 41:165-71.
30. Farmer DB, Gordon RG. Atomic Layer deposition on suspended single-walled carbon nanotubes via gas-phase noncovalent functionalization. Nano Lett 2006;6:699-703.
31. Fang T, Konar A, Xing H, Jena D. Carrier statistics and quantum capacitance of graphene sheets and ribbons. Appl Phys Lett 2007;91:092109.
32. 2 films from millimeter to nanometer length scales. Appl Phys Lett 2007;91:242905.
33. 3 films grown by atomic layer deposition on silicon and various metal substrates. Thin Solid Films 2002;413(1-2):186-97. (Pubitemid 34772312)
34. 3 on GaAs. Appl Phys Lett 2005;87:182904.