Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors

Solid-State Electronics

Volumn 53, Issue 10, 2009, Pages 1126-1129

  Sandow, C ^a   Knoch, J ^b   Urban, C ^a   Zhao, Q T ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b IBM RESEARCH ZURICH   (Switzerland)

Author keywords

Tunneling field effect transistor (TFET); Ultra thin body silicon on insulator (SOI)

Indexed keywords

BAND GAP NARROWING; BRILLOUIN; CHANNEL LENGTH; DOPING CONCENTRATION; ELECTRICAL MEASUREMENT; EXPERIMENTAL STUDIES; GATE OXIDE THICKNESS; LANDAUER; STATE PERFORMANCE; TUNNEL FET; TUNNELING FIELD-EFFECT TRANSISTOR (TFET); TUNNELING JUNCTIONS; TUNNELING PROCESS; ULTRA-THIN BODY SILICON-ON-INSULATOR (SOI); ULTRATHIN BODY;

DISSOCIATION; ELECTROSTATICS; GATES (TRANSISTOR); MESFET DEVICES; MICROSENSORS; TUNNELING (EXCAVATION); WIND TUNNELS;

FIELD EFFECT TRANSISTORS;

EID: 68349141664     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.05.009     Document Type: Article

References (20)

1. Reddick W., and Amaratunga G.A.J. Silicon surface tunnel transistor. Appl Phys Lett 67 (1995) 494
2. Koga J., and Toriumi A. Negative differential conductance in three-terminal silicon tunneling device. Appl Phys Lett 69 (1996) 1435
3. Aydin C., and Zaslavsky A. Lateral interband tunneling transistor in silicon-on-insulator. Appl Phys Lett 85 (2004) 1780
4. Appenzeller J., Lin Y.-M., Knoch J., and Avouris Ph. Band-to-band tunneling in carbon nanotube field-effect transistors. Phys Rev Lett 93 19 (2004) 196805-1-4
5. Boucart K., and Ionescu A.M. Double-gate tunnel FET with high-k gate dielectric. IEEE Trans Electron Dev 54 7 (2007) 1725
6. Bhuwalka K., Sedlmaier S., Ludsteck A., Tolksdorf C., Schulze J., and Eisele I. Vertical tunnel field-effect transistor. IEEE Trans Electron Dev 51 (2004) 279
7. Verhulst A.S., Vandenberghe W.G., Maex K., and Groeseneken G. Tunnel field-effect transistor without gate-drain overlap. Appl Phys Lett 91 (2007) 53102
8. Zhang Q., Zhao W., and Seabaugh A. Low-subthreshold-swing tunnel transistors. IEEE Electron Dev Lett 27 4 (2006) 297
9. Bhuwalka K.K., Born M., Schindler M., Schmidt M., Sulima T., and Eisele I. P-channel tunnel field-effect transistors down to sub-50 nm channel lengths. Jpn J Appl Phys 45 (2006) 3106
10. Choi W.Y., Park B.-G., Lee J.D., and Liu T.-J.K. Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec. IEEE Electron Dev Lett 28 8 (2007) 743
11. Mayer F, Le Royer C, Damlencourt J-F, Romanjek K, Andrieu F, Tabone C, et al. Impact of SOI, si1-xGexOI and GeOI substrates on CMOS compatible tunnel FET performance. In: Proceedings of the international electron device meeting; 2008. p. 163.
12. Datta S. Electronic transport in mesoscopic systems (1997), Cambridge University Press
13. Sze S.M. Physics of semiconductor devices. 3rd ed. (2007), John Wiley & Sons
14. Nagavarapu V., Jhaveri R., and Woo J.C.S. The tunnel source (PNPN) n-MOSFET: a novel high performance transistor. IEEE Trans Electron Dev 55 (2008) 1013
15. Björk M.T., Knoch J., Schmid H., Riel H., and Riess W. Silicon nanowire tunneling field-effect transistors. Appl Phys Lett 92 (2008) 193504
16. Knoch J., Mantl S., and Appenzeller J. Impact of the dimensionality on the performance of tunneling FETs: bulk versus one-dimensional devices. Solid-State Electron 51 4 (2007) 572
17. Yan R.-H., Ourmazd A., and Lee K.F. Scaling the Si MOSFET: from bulk to SOI to bulk. IEEE Trans Electron Dev 39 (1992) 1704
18. Knoch J., and Appenzeller J. Tunneling phenomena in carbon nanotube field-effect transistors. Phys Status Solidi (a) 205 4 (2008) 679
19. Zhao QT. Unpublished.
20. Thuselt F., and Rösler M. Universal approximation formulas for the gap shift in doped semiconductors. Phys Status Solidi (b) 130 (1985) K 139