Design of 60GHz RF transceiver in CMOS: Challenges and recent advances

China Communications

Volumn 11, Issue 6, 2014, Pages 32-41

  Li, Lianming ^a   Niu, Xiaokang ^a   Chen, Linhui ^a   Chai, Yuan ^a   Zhang, Tao ^a   Shi, Jun ^a   Wang, Aili ^a   Luo, Ying ^a   He, Long ^a   Cheng, Depeng ^a   Liu, Nan ^a   Cui, Tiejun ^a   You, Xiaohu ^a  

^a SOUTHEAST UNIVERSITY   (China)

Author keywords

CMOS; Low noise amplifier; Mixer; Power amplifer; Transceiver

Indexed keywords

EID: 84907325107     PISSN: 16735447     EISSN: None     Source Type: Journal    
DOI: 10.1109/CC.2014.6879001     Document Type: Article

References (28)

1. EEtimes, "Supporting LTE and multiple standards with SDR," [online], EETimes, 2010.
2. J. Laskar, S. Pinel, D. Dawn, S. Sarkar, B. Perumana, and P. Sen, "The next wireless wave is a millimeter wave", Microwave Journal, vol.50, no.8, pp.22-36. Aug. 2007.
3. R.C. Daniels, J. N.Murdock, T. S. Rappaport, and R. W. Heath, "60GHz Wireless: Up close and Personal", IEEE Microwave Magazine , pp. s44-s50, Dec. 2010.
4. T. S. Rappaport, S. Sun, R. Mayzus, H. Zhao, Y. Azar er al, "Millimeter wave mobile communication for 5G Cellular: it will work! " IEEE Access, pp. 335-349, Vol.1, Janu., 2013.
5. S. Pinel, S. Sarkar, P. Sen, B. Perumana, D. Yeh, D. Dawn, and J. Laskar, "A 90nm CMOS 60GHz Radio", in IEEE ISSCC Digest of Technical Papers, pp.130-131, Feb. 2008.
6. C. Marcu, D. Chowdhury, C. Thakkar, L, Kong, M.Tabesh, J. Park, Y. Wang, B. Afshar, A. Gupta, A. Arbabian, S. Gambini, R. Zamani, A.Niknejad, and E. Alon, "A 90nm CMOS Low-Power 60GHz transceiver with integrated baseband circuitry," in IEEE ISSCC Digest of Technical Papers, pp. 314-315, Feb. 2009.
7. S. Emami, R. Wiser, E. Ali, M. Forbes, M. Gordon, X. Guan, S. Lo, P. McElwee, J. Parker, J. Tani, J. Gilbert, and C. Doan, "A 60 GHz CMOS phase-array transceiver pair for multi-Gb/s wireless communication," in IEEE ISSCC Dig. Tech. Papers, pp. 164-165, Feb. 2011.
8. A. Siligaris, O. Richard et al, "A 65 nm CMOS fully integrated transceiver module for 60GHz wireless HD applications"in IEEE ISSCC Dig. Tech. Papers, pp. 162-163, Feb. 2011.
9. V. Vidojkovic, G. Mangraviti et al, "A low-power 57-66GHz transceiver in 40 nm LP CMOS with -17dB EVM at 7Gb/s" in IEEE ISSCC Dig. Tech. Papers, pp. 268-269, Feb. 2012.
10. T. Mitomo, Y. Tsutsumi et al. "A 2-Gb/s throughput CMOS transceiver chipset with in-package antenna for 60-GHz short-range wireless communication," IEEE Journal of Solid-State Circuits, vol.43, no.12, pp. 3160-3171. Dec. 2012.
11. K. Okada, K. Kondou et al, "Full four-channel 6.3Gb/s 60GHz direct-conversion transceiver with low-power analog and digital baseband circuitry" in IEEE ISSCC Dig. Tech. Papers, pp. 217-219, Feb. 2012.
12. IEEE, IEEE Standard for Information technology- IEEE Std 802.15.3c-2009 (Amendment to IEEE Std 802.15.3-2003), c1-187, Oct. 12, 2010.
13. ECMA, www.ecma-international.org/memento/ TC48-M.html, Dec. 2010.
14. International Technology Roadmap for Semiconductors, [online] www.itrs.net, 2009.
15. A. Niknejad, Electromagnetics for high-speed analog and digital communication circuits, Cambridge: Cambridge univ. press, 2007.
16. L. Li, P. Reynaert, and M. Steyaert, "A 60GHz 15.7mW Static Frequency Divider in 90nm CMOS," in IEEE European Solid-State Circuit Conf. pp. 246-249. Sept. 2010.
17. T.S. D. Cheung, and J. R. Long, "Shielded passive devices for silicon-based monolithic microwave and millimeter-wave integrated circuits," IEEE Journal of Solid-State Circuits, vol.41, no.5, pp. 1183-1200, May 2006.
18. A. Wang, L. Li, and T. Cui, "A transformer neutralization based 60GHz LNA in 65 nm LP CMOS with 22dB gain and 5.5dB NF," in IEEE ISCAS 2013, pp. 1111-1114, May 2013.
19. J. Shi, L. Li, and T. Cui, "A 60-GHz broadband Gilbert-cell down conversion mixer in a 65-nm CMOS", in IEEE EDSSC, pp.1-2 June 2013.
20. L. Li, P. Reynaert, M. Steyaert, "A 60-GHz CMOS VCO Using Capacitance-Splitting and Gate- Drain Impedance-Balancing Techniques", Microwave Theory and Techniques, IEEE Transactions on, pp. 406-413, Vol. 59 , Feb. 2011.
21. L. Chen, L. Li, and T. Cui, "A 1V 18 dBm 60GHz power amplifier with 24dB gain in 65nm LP CMOS," in IEEE APMC, pp. 13-15, Dec. 2012.
22. J.-W. Lai and A. Valdes-Garcia, "A 1V 17.9dBm 60GHz Power Amplifier in Standard 65nm CMOS," ISSCC Dig. Tech. Papers, pp. 424-425, Feb. 2010.
23. J. Chen and A. M. Niknejad, "A Compact 1V 18.6dBm 60GHz Power Amplifier in 65nm CMOS," ISSCC Dig. Tech. Papers, pp. 432-433, 20-24 Feb. 2011.
24. C. Y. Law and A.-V. Pham, "A High-Gain 60GHz Power Amplifier with 20dBm Output Power in 90nm CMOS," ISSCC Dig. Tech. Papers, pp. 426-427, Feb. 2010.
25. B. Martineau, et al., "A 53-to-68GHz 18dBm Power Amplifier with an 8-Way Combiner in Standard 65nm CMOS," ISSCC Dig. Tech. Papers, pp. 428-429, Feb. 2010.
26. T. Wang, et al., "A 55-67GHz Power Amplifier with 13.6% PAE in 65 nm standard CMOS " IEEE RFIC, pp. 1-4, June 2011.
27. W. L. Chan and J. R. Long, "A 58-65 GHz Neutralized CMOS Power Amplifier With PAE Above 10% at 1-V Supply," Solid-State Circuits, IEEE Journal of, vol. 45, pp. 554-564, March 2010.
28. A. Siligaris, et al., "A 60GHz Power Amplifier with 14.5dBm saturation power and 25% peak PAE in CMOS 65nm Sol," ESSCIRC, Proceeding of, pp. 168-171, Sept. 2009.