A 53-to-68GHz 18dBm power amplifier with an 8-way combiner in standard 65nm CMOS

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 53, Issue , 2010, Pages 428-429

  Martineau, Baudouin ^a   Knopik, Vincent ^b   Siligaris, Alexandre ^c   Gianesello, Frederic ^a   Belot, Didier ^a  

^a STMICROELECTRONICS   (France)

^b ST Ericsson   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CASCODE TOPOLOGY; CLASS-AB POWER AMPLIFIERS; CMOS CIRCUITS; CMOS PROCESSS; DC VOLTAGE; DRAIN-SOURCE VOLTAGE; FREQUENCY BAND WIDTH; FULL BAND; HIGH DATA RATE; HIGH LINEARITY; IEEE 802.15.3C; LARGE-SIGNALS; MARKET DEMAND; MAXIMUM AVAILABLE GAIN; MM-WAVE FREQUENCIES; OFDM MODULATION; OUTPUT POWER; POWER PERFORMANCE; RELIABILITY CONSTRAINTS; SATURATED OUTPUT POWER; SPECIFIC DESIGN; SUPPLY VOLTAGES; TIME-DEPENDENT DIELECTRIC BREAKDOWN; TRANSISTOR RELIABILITY; WIRELESS APPLICATION;

DIELECTRIC MATERIALS; MILLIMETER WAVES; ORTHOGONAL FREQUENCY DIVISION MULTIPLEXING; POWER AMPLIFIERS; RELIABILITY; STANDARDS;

CMOS INTEGRATED CIRCUITS;

EID: 77952209787     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2010.5433879     Document Type: Conference Paper

References (7)

1. M. Tanomura et al,"TX and RX Front-Ends for 60GHz Band in 90nm Standard Bulk CMOS," ISSCC Dig. Tech. Papers, pp. 558-559, Feb. 2008.
2. D. Chowdhury, P. Reynaert, and A. Niknejad, "A 60 GHz 1 V +12.3 dBm transformer-coupled wideband PA in 90 nm CMOS," ISSCC Dig. Tech. Papers, pp. 560-561, Feb. 2008.
3. D. Dawn et al, "60GHz CMOS Power Amplifier with 20-dB-Gain and 12dBm Psat" IEEE International Microwave Symp. Dig., pp. 537-540, Jun 2009.
4. S. Pinel et al, "A 90 nm CMOS 60 GHz radio," ISSCC Dig. Tech. Papers, pp. 130-131, Feb. 2008.
5. W.L. Chan, J.R. Long, M. Spirito, and J.J. Pekarik,"A 60GHz-Band 1V 11.5dBm Power Amplifier with 11% PAE in 65nm CMOS," ISSCC Dig. Tech. Papers, pp. 380-381, Feb. 2009.
6. Jen Yung-Nien et al, "Design and Analysis of a 55-71-GHz Compact and Broadband Distributed Active Transformer Power Amplifier in 90-nm CMOS Process," IEEE Trans. Microwave Theory and Techniques,vol.57, no.7, pp.1637- 1646, July 2009.
7. C. Park, D. H. Lee, J. Han, and S. Hong, "Tournament-shaped magnetically coupled power-combiner architecture for RF CMOS power amplifier," IEEE Trans. Microwave Theory and Techniques,vol. 55, pp. 2034-2042, Oct. 2007.