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Volumn , Issue , 2013, Pages 1111-1114

A transformer neutralization based 60GHz LNA in 65 nm LP CMOS with 22dB gain and 5.5dB NF

Author keywords

[No Author keywords available]

Indexed keywords

CMOS PROCESSS; MILLER CAPACITANCE; MM-WAVE FREQUENCIES;

EID: 84883316083     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCAS.2013.6572045     Document Type: Conference Paper
Times cited : (3)

References (9)
  • 2
    • 46749102853 scopus 로고    scopus 로고
    • A 64 GHz LNA with 15.5 dB Gain and 6.5 dB NF in 90 nm CMOS
    • Jul.
    • Stefano Pellerano, Yorgos Palaskas, and Krishnamurthy Soumyanath. "A 64 GHz LNA with 15.5 dB Gain and 6.5 dB NF in 90 nm CMOS," IEEE J. Solid-State Circuits, vol. 43, no. 7, pp. 1542-1552, Jul. 2008.
    • (2008) IEEE J. Solid-State Circuits , vol.43 , Issue.7 , pp. 1542-1552
    • Pellerano, S.1    Palaskas, Y.2    Soumyanath, K.3
  • 6
    • 0034271857 scopus 로고    scopus 로고
    • Monolithic transformers for silicon RF IC design
    • Sep.
    • John R. Long. "Monolithic transformers for silicon RF IC design," IEEE J. Solid-State Circuits, vol. 35, no.9 pp. 1368-1382, Sep. 2000.
    • (2000) IEEE J. Solid-State Circuits , vol.35 , Issue.9 , pp. 1368-1382
    • Long, J.R.1
  • 9
    • 77954498318 scopus 로고    scopus 로고
    • A 17 GHz trans former neutralized current re-use LNA and its application to a low-power RF front-end
    • Sandippan Kundu and JeyanandhParamesh. "A 17 GHz transformerneutralized current re-use LNA and its application to a low-power RF front-end," IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2010, pp.307-310.
    • (2010) IEEE Radio Frequency Integrated Circuits Symposium (RFIC) , pp. 307-310
    • Kundu, S.1    Paramesh, J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.