A 60GHz power amplifier with 14.5dBm saturation power and 25% peak PAE in CMOS 65nm SOI

ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference

Volumn , Issue , 2009, Pages 168-171

  Siligaris, Alexandre ^a   Hamada, Yasuhiro ^c   Mounet, Christopher ^a   Raynaud, Christine ^a,b   Martineau, Baudouin ^b   Deparis, Nicolas ^d   Rolland, Nathalie ^d   Fukaishi, Muneo ^c   Vincent, Pierre ^a  

^a CEA GRENOBLE   (France)

^b STMICROELECTRONICS   (France)

^c NEC CORPORATION   (Japan)

^d INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CASCODE; HIGH RESISTIVITY; LOW LOSS; PEAK POWER; SATURATION POWER; SOI SUBSTRATES; STANDARD CMOS; SUPPLY VOLTAGES; TRANSMISSION LINE; WIDEBAND POWER AMPLIFIER;

POWER AMPLIFIERS;

BROADBAND AMPLIFIERS;

EID: 72849133862     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSCIRC.2009.5326013     Document Type: Conference Paper

References (9)

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