A 1V 17.9dBm 60GHz power amplifier in standard 65nm CMOS

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 53, Issue , 2010, Pages 424-425

  Lai, Jie Wei ^a   Valdes Garcia, Alberto ^b  

^a MEDIATEK INC   (Taiwan)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-OFF; CMOS PA; CMOS TECHNOLOGY; HIGHLY INTEGRATED; MM-WAVE; POWER REQUIREMENT; SINGLE ANTENNA;

CMOS INTEGRATED CIRCUITS; MOBILE DEVICES; POWER AMPLIFIERS; SIGNAL RECEIVERS;

MOBILE ANTENNAS;

EID: 77952189133     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2010.5433870     Document Type: Conference Paper

References (5)

1. M. Tanomura, et al. "TX and RX front-ends for 60GHz band in 90nm standard bulk CMOS," in ISSCC Dig. Tech. Papers, pp.558-559, Feb. 2008.
2. T. LaRocca, et al, "60GHz CMOS amplifiers using transformer-coupling and artificial dielectric differential transmission lines for compact design," IEEE J. Solid-State Circuits, vol. 44, no. 5, pp.1425-1435, May 2009.
3. M. Bohsali, et al, "Current combining 60GHz CMOS power amplifiers," IEEE Radio Frequency Integrated Circuits Symp., pp.31-34, June 2009.
4. Y.N. Jen, et al, "Design and analysis of a 55-71GHz compact and broadband distributed active transformer power amplifier in 90nm CMOS process," IEEE Trans. Microwave Theory and Techniques., vol. 57, no. 7, pp.1637-1646, July 2009.
5. U.R. Pfeiffer, et al, "A 20dBm fully-integrated 60GHz SiGe power amplifier with automatic level control," IEEE J. Solid-State Circuits, vol. 42, no. 7, pp.1455-1463, July 2007.