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Asia-Pacific Microwave Conference Proceedings, APMC
Volumn , Issue , 2012, Pages 13-15
A 1V 18 dBm 60GHz power amplifier with 24dB gain in 65nm LP CMOS
Author keywords

capacitive neutralization; millimeter wave; power amplifier; power combining; transformer
Indexed keywords

3 DB BANDWIDTH; CAPACITIVE NEUTRALIZATION; HIGH GAIN; IMPEDANCE MATCHING NETWORK; MAXIMUM GAIN; POWER COMBINING; PSEUDO DIFFERENTIAL; REVERSE ISOLATION; SATURATED OUTPUT POWER; SHUNT INDUCTORS; SMALL AREA; SMALL-SIGNAL GAIN; SUPPLY VOLTAGES; TRANSFORMER;
EID: 84874404744     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APMC.2012.6421482     Document Type: Conference Paper
Times cited : (12)
References (8)
  • 1
    • 77952189133 scopus 로고    scopus 로고
    • A 1V 17.9dBm 60GHz power amplifier in standard 65nm CMOS
    • Feb.
    • J.-W. Lai and A. Valdes-Garcia, "A 1V 17.9dBm 60GHz Power Amplifier in Standard 65nm CMOS," ISSCC Dig. Tech. Papers, pp. 424-425, Feb. 2010.
    • (2010) ISSCC Dig. Tech. Papers , pp. 424-425
    • Lai, J.-W.1    Valdes-Garcia, A.2
  • 2
    • 79955728360 scopus 로고    scopus 로고
    • A compact 1V 18.6dBm 60GHz power amplifier in 65nm CMOS
    • 20-24 Feb.
    • J. Chen and A. M. Niknejad, "A Compact 1V 18.6dBm 60GHz Power Amplifier in 65nm CMOS," ISSCC Dig. Tech. Papers, pp. 432-433, 20-24 Feb. 2011.
    • (2011) ISSCC Dig. Tech. Papers , pp. 432-433
    • Chen, J.1    Niknejad, A.M.2
  • 3
    • 77952112375 scopus 로고    scopus 로고
    • A high-gain 60GHz power amplifier with 20dBm output power in 90nm CMOS
    • Feb.
    • C. Y. Law and A.-V. Pham, "A High-Gain 60GHz Power Amplifier with 20dBm Output Power in 90nm CMOS," ISSCC Dig. Tech. Papers, pp. 426-427, Feb. 2010.
    • (2010) ISSCC Dig. Tech. Papers , pp. 426-427
    • Law, C.Y.1    Pham, A.-V.2
  • 4
    • 77952209787 scopus 로고    scopus 로고
    • A 53-to-68GHz 18dBm power amplifier with an 8-way combiner in standard 65nm CMOS
    • Feb.
    • B. Martineau, et al., "A 53-to-68GHz 18dBm Power Amplifier with an 8-Way Combiner in Standard 65nm CMOS," ISSCC Dig. Tech. Papers, pp. 428-429, Feb. 2010.
    • (2010) ISSCC Dig. Tech. Papers , pp. 428-429
    • Martineau, B.1
  • 5
    • 84874400402 scopus 로고    scopus 로고
    • A 55-67GHz power amplifier with 13.6% PAE in 65 nm standard CMOS
    • June
    • T. Wang, et al., "A 55-67GHz Power Amplifier with 13.6% PAE in 65 nm standard CMOS" IEEE RFIC, pp. 1-4, June 2011.
    • (2011) IEEE RFIC , pp. 1-4
    • Wang, T.1
  • 6
    • 77649151751 scopus 로고    scopus 로고
    • A 58-65 GHz neutralized CMOS power amplifier with PAE above 10% at 1-V supply
    • IEEE Journal of March
    • W. L. Chan and J. R. Long, "A 58-65 GHz Neutralized CMOS Power Amplifier With PAE Above 10% at 1-V Supply," SolidState Circuits, IEEE Journal of, vol. 45, pp. 554-564, March 2010.
    • (2010) SolidState Circuits , vol.45 , pp. 554-564
    • Chan, W.L.1    Long, J.R.2
  • 7
    • 72849133862 scopus 로고    scopus 로고
    • A 60GHz power amplifier with 14.5dBm saturation power and 25% peak PAE in CMOS 65nm SOI
    • Sept.
    • A. Siligaris, et al., "A 60GHz Power Amplifier with 14.5dBm saturation power and 25% peak PAE in CMOS 65nm SOI," ESSCIRC, Proceeding of, pp. 168-171, Sept. 2009.
    • (2009) ESSCIRC, Proceeding Of , pp. 168-171
    • Siligaris, A.1
  • 8
    • 78650392690 scopus 로고    scopus 로고
    • 60GHz power amplifier with distributed active transformer and local feedback
    • Sept
    • Y. He, et al., "60GHz power amplifier with distributed active transformer and local feedback," ESSCIRC, Proceeding of, pp. 314-317, Sept 2010.
    • (2010) ESSCIRC, Proceeding Of , pp. 314-317
    • He, Y.1

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.