Laser-induced solid-phase doped graphene

ACS Nano

Volumn 8, Issue 8, 2014, Pages 7671-7677

  Choi, Insung ^a   Jeong, Hu Young ^b   Jung, Dae Yool ^a   Byun, Myunghwan ^a   Choi, Choon Gi ^c   Hong, Byung Hee ^d   Choi, Sung Yool ^a   Lee, Keon Jae ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Ulsan National Institute of Science and Technology   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^d Seoul National University   (South Korea)

Author keywords

laser; nitrogen doped graphene; silicon carbide; solid phase synthesis

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; DOPING (ADDITIVES); IRRADIATION; LASERS; PULSED LASERS; SILICON CARBIDE; SUBSTRATES; SYNTHESIS (CHEMICAL);

ELECTRONIC DEVICE; GAS PHASE DOPING; NITROGEN DOPED GRAPHENE; RESIDUAL POLYMERS; SILICON CARBIDES (SIC); SOLID PHASE SYNTHESIS; SURFACE TEMPERATURES; TEMPERATURE HISTORY;

GRAPHENE;

EID: 84906693612     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn5032214     Document Type: Article

References (44)

1. Geim, A. K.; Novoselov, K. S. The Rise of Graphene Nat. Mater. 2007, 6, 183-191
2. Katsnelson, M. I.; Novoselov, K. S. Graphene: New Bridge between Condensed Matter Physics and Quantum Electrodynamics Solid State Commun. 2007, 143, 3-13
3. Morozov, S. V.; Novoselov, K. S.; Katsnelson, M. I.; Schedin, F.; Elias, D. C.; Jaszczak, J. A.; Geim, A. K. Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer Phys. Rev. Lett. 2008, 100, 016602
4. Kim, K.; Choi, J. Y.; Kim, T.; Cho, S. H.; Chung, H. J. A Role for Graphene in Silicon-Based Semiconductor Devices Nature 2011, 479, 338-344
5. Schwierz, F. Graphene Transistors Nat. Nanotechnol. 2010, 5, 487-496
6. Liu, H. T.; Liu, Y. Q.; Zhu, D. B. Chemical Doping of Graphene J. Mater. Chem. 2011, 21, 3335-3345
7. Wang, H. B.; Maiyalagan, T.; Wang, X. Review on Recent Progress in Nitrogen-Doped Graphene: Synthesis, Characterization, and Its Potential Applications ACS Catal. 2012, 2, 781-794
8. Wei, D. C.; Liu, Y. Q.; Wang, Y.; Zhang, H. L.; Huang, L. P.; Yu, G. Synthesis of N-Doped Graphene by Chemical Vapor Deposition and Its Electrical Properties Nano Lett. 2009, 9, 1752-1758
9. Jin, Z.; Yao, J.; Kittrell, C.; Tour, J. M. Large-Scale Growth and Characterizations of Nitrogen-Doped Monolayer Graphene Sheets ACS Nano 2011, 5, 4112-4117
10. Zhao, L. Y.; He, R.; Rim, K. T.; Schiros, T.; Kim, K. S.; Zhou, H.; Gutierrez, C.; Chockalingam, S. P.; Arguello, C. J.; Palova, L. Visualizing Individual Nitrogen Dopants in Monolayer Graphene Science 2011, 333, 999-1003
11. Usachov, D.; Vilkov, O.; Gruneis, A.; Haberer, D.; Fedorov, A.; Adamchuk, V. K.; Preobrajenski, A. B.; Dudin, P.; Barinov, A.; Oehzelt, M. Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties Nano Lett. 2011, 11, 5401-5407
12. Zhang, C. H.; Fu, L.; Liu, N.; Liu, M. H.; Wang, Y. Y.; Liu, Z. F. Synthesis of Nitrogen-Doped Graphene Using Embedded Carbon and Nitrogen Sources Adv. Mater. 2011, 23, 1020-1024
13. Kim, K. S.; Zhao, Y.; Jang, H.; Lee, S. Y.; Kim, J. M.; Kim, K. S.; Ahn, J. H.; Kim, P.; Choi, J. Y.; Hong, B. H. Large-Scale Pattern Growth of Graphene Films for Stretchable Transparent Electrodes Nature 2009, 457, 706-710
14. Bae, S.; Kim, H.; Lee, Y.; Xu, X. F.; Park, J. S.; Zheng, Y.; Balakrishnan, J.; Lei, T.; Kim, H. R.; Song, Y. I. Roll-to-Roll Production of 30-Inch Graphene Films for Transparent Electrodes Nat. Nanotechnol. 2010, 5, 574-578
15. Song, J.; Kam, F. Y.; Png, R. Q.; Seah, W. L.; Zhuo, J. M.; Lim, G. K.; Ho, P. K. H.; Chua, L. L. A General Method for Transferring Graphene onto Soft Surfaces Nat. Nanotechnol. 2013, 8, 356-362
16. Velez-Fort, E.; Mathieu, C.; Pallecchi, E.; Pigneur, M.; Silly, M. G.; Belkhou, R.; Marangolo, M.; Shukla, A.; Sirotti, F.; Ouerghi, A. Epitaxial Graphene on 4H-SiC(0001) Grown under Nitrogen Flux: Evidence of Low Nitrogen Doping and High Charge Transfer ACS Nano 2012, 6, 10893-10900
17. Wang, Z. J.; Wei, M. M.; Jin, L.; Ning, Y. X.; Yu, L.; Fu, Q.; Bao, X. H. Simultaneous N-Intercalation and N-Doping of Epitaxial Graphene on 6H-SiC(0001) through Thermal Reactions with Ammonia Nano Res. 2013, 6, 399-408
18. 4/SiC Heterostructures Nano Res. 2014, 7, 835-843
19. Telychko, M.; Mutombo, P.; Ondracek, M.; Hapala, P.; Bocquet, F. C.; Kolorenc, J.; Vondracek, M.; Jelinek, P.; Svec, M., Achieving High-Quality Single-Atom Nitrogen Doping of Graphene/SiC(0001) by Ion Implantation and Subsequent Thermal Stabilization. ACS Nano DOI: 10.1021/nn502438k.
20. Lee, S.; Toney, M. F.; Ko, W.; Randel, J. C.; Jung, H. J.; Munakata, K.; Lu, J.; Geballe, T. H.; Beasley, M. R.; Sinclair, R. Laser-Synthesized Epitaxial Graphene ACS Nano 2010, 4, 7524-7530
21. Hwang, H. J.; Cho, C.; Lim, S. K.; Lee, S. Y.; Kang, C. G.; Hwang, H.; Lee, B. H. Electrical Characteristics of Wrinkle-Free Graphene Formed by Laser Graphitization of 4H-SiC Appl. Phys. Lett. 2011, 99, 082111
22. Kim, T. I.; Jung, Y. H.; Song, J. Z.; Kim, D.; Li, Y. H.; Kim, H. S.; Song, I. S.; Wierer, J. J.; Pao, H. A.; Huang, Y. G. High-Efficiency, Microscale GaN Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates Small 2012, 8, 1643-1649
23. Kim, Y. H.; Sohn, C. Y.; Lim, J. W.; Yun, S. J.; Hwang, C. S.; Chung, C. H.; Ko, Y. W.; Lee, J. H. High-Performance Ultralow-Temperature Polycrystalline Silicon TFT Using Sequential Lateral Solidification IEEE Electron Device Lett. 2004, 25, 550-552
24. Gupta, V. V.; Song, H. J.; Im, J. S. Numerical Analysis of Excimer-Laser-Induced Melting and Solidification of Thin Si Films Appl. Phys. Lett. 1997, 71, 99-101
25. Leonard, J. P.; Im, J. S. Modelling Solid Nucleation and Growth in Supercooled Liquid Mater. Res. Soc. Symp. Proc. 1999, 580, 233-244
26. Leonard, J. P.; Im, J. S. Stochastic Modeling of Solid Nucleation in Supercooled Liquids Appl. Phys. Lett. 2001, 78, 3454-3456
27. Dutto, C.; Fogarassy, E.; Mathiot, D. Numerical and Experimental Analysis of Pulsed Excimer Laser Processing of Silicon Carbide Appl. Surf. Sci. 2001, 184, 362-366
28. Scace, R. I.; Slack, G. A. Solubility of Carbon in Silicon and Germanium J. Chem. Phys. 1959, 30, 1551-1555
29. Berger, C.; Song, Z. M.; Li, T. B.; Li, X. B.; Ogbazghi, A. Y.; Feng, R.; Dai, Z. T.; Marchenkov, A. N.; Conrad, E. H.; First, P. N. Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward graphene-based nanoelectronics J. Phys. Chem. B 2004, 108, 19912-19916
30. Berger, C.; Song, Z. M.; Li, X. B.; Wu, X. S.; Brown, N.; Naud, C.; Mayou, D.; Li, T. B.; Hass, J.; Marchenkov, A. N. Electronic Confinement and Coherence in Patterned Epitaxial Graphene Science 2006, 312, 1191-1196
31. Emtsev, K. V.; Bostwick, A.; Horn, K.; Jobst, J.; Kellogg, G. L.; Ley, L.; McChesney, J. L.; Ohta, T.; Reshanov, S. A.; Rohrl, J. Towards Wafer-Size Graphene Layers by Atmospheric Pressure Graphitization of Silicon Carbide Nat. Mater. 2009, 8, 203-207
32. Zafar, Z.; Ni, Z. H.; Wu, X.; Shi, Z. X.; Nan, H. Y.; Bai, J.; Sun, L. T. Evolution of Raman Spectra in Nitrogen Doped Graphene Carbon 2013, 61, 57-62
33. Panchokarla, L. S.; Subrahmanyam, K. S.; Saha, S. K.; Govindaraj, A.; Krishnamurthy, H. R.; Waghmare, U. V.; Rao, C. N. R. Synthesis, Structure, and Properties of Boron- and Nitrogen-Doped Graphene Adv. Mater. 2009, 21, 4726-4730
34. 2 Appl. Phys. Lett. 2007, 91, 241907
35. Pensl, G.; Ciobanu, F.; Frank, T.; Krieger, M.; Reshanov, S.; Schmid, F.; Weidner, M. SiC Material Properties Int. J. High Speed Electron. Syst. 2005, 15, 705745
36. Ferrari, A. C. Raman Spectroscopy of Graphene and Graphite: Disorder, Electron-Phonon Coupling, Doping and Nonadiabatic Effects Solid State Commun. 2007, 143, 47-57
37. Ni, Z. H.; Chen, W.; Fan, X. F.; Kuo, J. L.; Yu, T.; Wee, A. T. S.; Shen, Z. X. Raman Spectroscopy of Epitaxial Graphene on a SiC Substrate Phys. Rev. B 2008, 77, 115416
38. 2-Laser-Induced Growth of Epitaxial Graphene on 6H-SiC(0001) Adv. Funct. Mater. 2012, 22, 113-120
39. Riedl, C.; Coletti, C.; Starke, U. Structural and Electronic Properties of Epitaxial Graphene on SiC(0001): A Review of Growth, Characterization, Transfer Doping and Hydrogen Intercalation J. Phys. D: Appl. Phys. 2010, 43, 374009
40. Pegourie, B. Optical-Properties of Alpha-Silicon Carbide Astron. Astrophys. 1988, 194, 335-339
41. Nilsson, O.; Mehling, H.; Horn, R.; Fricke, J.; Hofmann, R.; Muller, S. G.; Eckstein, R.; Hofmann, D. Determination of the Thermal Diffusivity and Conductivity of Mono Crystalline Silicon Caride (300-2300 K) High Temp.-High Pressures 1997, 29, 73-79
42. Lin, Y. C.; Lin, C. Y.; Chiu, P. W. Controllable Graphene N-Doping with Ammonia Plasma Appl. Phys. Lett. 2010, 96, 133110
43. Rohrl, J.; Hundhausen, M.; Emtsev, K. V.; Seyller, T.; Graupner, R.; Ley, L. Raman Spectra of Epitaxial Graphene on SiC(0001) Appl. Phys. Lett. 2008, 92, 201918
44. Ferralis, N.; Maboudian, R.; Carraro, C. Evidence of Structural Strain in Epitaxial Graphene Layers on 6H-SiC(0001) Phys. Rev. Lett. 2008, 101, 156801