Achieving high-quality single-atom nitrogen doping of graphene/SiC(0001) by ion implantation and subsequent thermal stabilization

ACS Nano

Volumn 8, Issue 7, 2014, Pages 7318-7324

  Telychko, Mykola ^a,b   Mutombo, Pingo ^a   Ondráček, Martin ^a   Hapala, Prokop ^a   Bocquet, François C ^c,e   Kolorenč, Jindřich ^a   Vondráček, Martin ^a   Jelínek, Pavel ^a,d   Švec, Martin ^a  

^a INSTITUTE OF PHYSICS   (Czech Republic)

^b CHARLES UNIVERSITY   (Czech Republic)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d OSAKA UNIVERSITY   (Japan)

^e Section JARA FIT   (Germany)

Author keywords

doping; graphene; implantation; nitrogen; photoemission; SiC; STM

Indexed keywords

DEFECTS; DOPING (ADDITIVES); GRAPHENE; NITROGEN; PHOTOEMISSION; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; STABILIZATION;

NITROGEN ION IMPLANTATIONS; NITROGEN-DOPED GRAPHENE; QUANTUM INTERFERENCE; SECOND-NEAREST-NEIGHBOR; SIC; STM; STRAIGHT-FORWARD METHOD; THERMAL STABILIZATION;

ION IMPLANTATION;

EID: 84904765297     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn502438k     Document Type: Article

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