High-performance ultralow-temperature polycrystalline silicon TFT using sequential lateral solidification

IEEE Electron Device Letters

Volumn 25, Issue 8, 2004, Pages 550-552

  Kim, Yong Hae ^a   Sohn, Choong Yong ^a   Lim, Jung Wook ^a   Yun, Sun Jin ^a   Hwang, Chi Sun ^a   Chung, Choong Heui ^a   Ko, Young Wook ^a   Lee, Jin Ho ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTALLIZATION; DIELECTRIC MATERIALS; FLAT PANEL DISPLAYS; LOW TEMPERATURE PROPERTIES; MAGNETRON SPUTTERING; MOS DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SOLIDIFICATION; SPUTTER DEPOSITION;

PLASMA ENHANCED ATOMIC LAYER DEPOSITION; PLASMA OXIDATION; SEQUENTIAL LATERAL SOLIDIFICATION; ULTRALOW TEMPERATURE POLYCRYSTALLINE SILICON;

THIN FILM TRANSISTORS;

EID: 3943079320     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.831578     Document Type: Article

References (15)

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