Numerical and experimental analysis of pulsed excimer laser processing of silicon carbide

Applied Surface Science

Volumn 184, Issue 1-4, 2001, Pages 362-366

  Dutto, C ^a,b   Fogarassy, E ^a   Mathiot, D ^a  

^a CNRS   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Doping; Excimer laser; Melting; Silicon carbide; Simulation

Indexed keywords

AMORPHOUS SILICON; COMPUTER SIMULATION; DOPING (ADDITIVES); EXCIMER LASERS; MELTING; PULSED LASER APPLICATIONS;

THERMAL SIMULATIONS;

SILICON CARBIDE;

EID: 0035852223     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00518-9     Document Type: Article

References (24)