Influence of substrate material, orientation, and surface termination on GaN nanowire growth

Journal of Applied Physics

Volumn 116, Issue 5, 2014, Pages

  Schuster, Fabian ^a   Weiszer, Saskia ^a   Hetzl, Martin ^a   Winnerl, Andrea ^a   Garrido, Jose A ^a   Stutzmann, Martin ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; GALLIUM NITRIDE; NANOWIRES; NUCLEATION; SINGLE CRYSTALS;

EPITAXIAL RELATIONSHIPS; GROWTH DIRECTIONS; HETERO INTERFACES; NUCLEATION AND GROWTH; SELECTIVE AREA GROWTH; SUBSTRATE MATERIAL; SURFACE ORIENTATION; SURFACE TERMINATION;

SUBSTRATES;

EID: 84905979857     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4892113     Document Type: Article

References (21)

1. M. Yoshizawa, A. Kikuchi, M. Mori, N. Fujita, and K. Kishino, Jpn. J. Appl. Phys., Part 2 36, L459 (1997). 10.1143/JJAP.36.L459
2. E. Calleja, M. A. Sánchez-García, F. J. Sánchez, F. Calle, F. B. Naranjo, and E. Muñoz, Phys. Rev. B 62, 16826 (2000). 10.1103/PhysRevB.62.16826
3. J. Ristić, E. Calleja, S. Fernández-Garrido, L. Cerutti, A. Trampert, U. Jahn, and K. H. Ploog, J. Cryst. Growth 310, 4035 (2008). 10.1016/j.jcrysgro.2008.05.057
4. O. Landré, C. Bougerol, H. Renevier, and B. Daudin, Nanotechnology 20, 415602 (2009). 10.1088/0957-4484/20/41/415602
5. V. Consonni, M. Knelangen, L. Geelhaar, A. Trampert, and H. Riechert, Phys. Rev. B 81, 085310 (2010). 10.1103/PhysRevB.81.085310
6. V. Consonni, M. Hanke, M. Knelangen, L. Geelhaar, A. Trampert, and H. Riechert, Phys. Rev. B 83, 035310 (2011). 10.1103/PhysRevB.83.035310
7. K. A. Bertness, A. Roshko, L. M. Mansfield, T. E. Harvey, and N. A. Sanford, J. Cryst. Growth 310, 3154 (2008). 10.1016/j.jcrysgro.2008.03.033
8. R. Calarco, R. J. Meijers, R. K. Debnath, T. Stoica, E. Sutter, and H. Lüth, Nano Lett. 7, 2248 (2007). 10.1021/nl0707398
9. F. Furtmayr, M. Vielemeyer, M. Stutzmann, J. Arbiol, S. Estradé, F. Peiro, J. R. Morante, and M. Eickhoff, J. Appl. Phys. 104, 034309 (2008). 10.1063/1.2953087
10. S. Fernández-Garrido, J. Grandal, E. Calleja, M. A. Sánchez-García, and D. López-Romero, J. Appl. Phys. 106, 126102 (2009). 10.1063/1.3267151
11. F. Schuster, F. Furtmayr, R. Zamani, C. Magén, J. R. Morante, J. Arbiol, J. A. Garrido, and M. Stutzmann, Nano Lett. 12, 2199 (2012). 10.1021/nl203872q
12. J. B. Cui, J. Ristein, and L. Ley, Phys. Rev. Lett. 81, 429 (1998). 10.1103/PhysRevLett.81.429
13. F. Maier, J. Ristein, and L. Ley, Phys. Rev. B 64, 165411 (2001). 10.1103/PhysRevB.64.165411
14. S. Fernández-Garrido, V. M. Kaganer, K. K. Sabelfeld, T. Gotschke, J. Grandal, E. Calleja, L. Geelhaar, and O. Brandt, Nano Lett. 13, 3274 (2013). 10.1021/nl401483e
15. F. Schuster, B. Laumer, R. Zamani, C. Magén, J. R. Morante, J. Arbiol, and M. Stutzmann, ACS Nano 8, 4376 (2014). 10.1021/nn406134e
16. S. Fernández-Garrido, X. Kong, T. Gotschke, R. Calarco, L. Geelhaar, A. Trampert, and O. Brandt, Nano Lett. 12, 6119 (2012). 10.1021/nl302664q
17. R. Songmuang, T. Ben, B. Daudin, D. González, and E. Monroy, Nanotechnology 21, 295605 (2010). 10.1088/0957-4484/21/29/295605
18. See supplementary material at http://dx.doi.org/10.1063/1.4892113 E-JAPIAU-116-075430 for pole figures of the diamond substrates to deduce epitaxial relationship.
19. G. Vogg, C. R. Miskys, J. A. Garrido, M. Hermann, M. Eickhoff, and M. Stutzmann, J. Appl. Phys. 96, 895 (2004). 10.1063/1.1759088
20. C. G. Van de Walle and J. Neugebauer, Nature 423, 626 (2003). 10.1038/nature01665
21. P. K. Baumann and R. J. Nemanich, Surf. Sci. 409, 320 (1998). 10.1016/S0039-6028(98)00259-3