P-GaN/n-ZnO heterojunction nanowires: Optoelectronic properties and the role of interface polarity

ACS Nano

Volumn 8, Issue 5, 2014, Pages 4376-4384

  Schuster, Fabian ^a   Laumer, Bernhard ^a   Zamani, Reza R ^b,c   Magén, Cesar ^d,e   Morante, Joan Ramon ^c,f   Arbiol, Jordi ^b,g   Stutzmann, Martin ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

^c CATALONIA INSTITUTE FOR ENERGY RESEARCH IREC   (Spain)

^d UNIVERSITY OF ZARAGOZA   (Spain)

^e FUNDACIÓN ARAID   (Spain)

^f UNIVERSITY OF BARCELONA   (Spain)

^g INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANÇATS ICREA   (Spain)

Author keywords

ABF STEM; GaN; heterojunction; interface; molecular beam epitaxy; nanowires; polarity; ZnO

Indexed keywords

BAND STRUCTURE; CRYSTALLOGRAPHY; EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NANOWIRES; OPTICAL PUMPING; TRANSMISSION ELECTRON MICROSCOPY;

ABF STEM; GAN; OPTOELECTRONIC PROPERTIES; PHOTOLUMINESCENCE MEASUREMENTS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; POLARITY; SCANNING TRANSMISSION ELECTRON MICROSCOPY; ZNO;

ZINC OXIDE;

EID: 84901650216     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn406134e     Document Type: Article

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