Pulsed voltage driven organic field-effect transistors for high stability transient current measurements

Organic Electronics

Volumn 15, Issue 10, 2014, Pages 2372-2380

  Manoli, Kyriaki ^a   Patrikoussakis, Marios M ^a   Magliulo, Maria ^a   Dumitru, Liviu M ^a   Mulla, Mohammad Y ^a   Sabbatini, Luigia ^a   Torsi, Luisa ^a  

^a UNIVERSITY OF BARI   (Italy)

Author keywords

Gas sensing; Hysteresis; Organic field effect transistor; Transient current

Indexed keywords

CHEMICAL DETECTION; ELECTRIC CURRENT MEASUREMENT; GAS DETECTORS; HYSTERESIS; POWER QUALITY; TRANSIENT ANALYSIS; TRANSISTORS;

ALTERNATING POLARITY; GAS SENSING; LANGMUIR ADSORPTION ISOTHERMS; POLY(3-HEXYLTHIOPHENE-2 ,5-DIYL); SEMICONDUCTOR CHANNELS; TRANSFER CHARACTERISTICS; TRANSIENT CURRENT; TRANSIENT-CURRENT MEASUREMENTS;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 84905163138     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2014.06.034     Document Type: Article

References (35)

1. M.D. Angione, R. Pilolli, S. Cotrone, M. Magliulo, A. Mallardi, G. Palazzo, L. Sabbatini, D. Fine, A. Dodabalapur, and N. Cioffi Carbon based materials for electronic bio-sensing Mater. Today 14 2011 424 433
2. C. Liao, and F. Yan Organic semiconductors in organic thin-film transistor-based chemical and biological sensors Polym. Rev. 53 2013 352 406
3. T. Someya, A. Dodabalapur, J. Huang, K.C. See, and H.E. Katz Chemical and physical sensing by organic field-effect transistors and related devices Adv. Mater. 22 2010 3799 3811
4. L. Torsi, M. Magliulo, K. Manoli, and G. Palazzo Organic field-effect transistor sensors: a tutorial review Chem. Soc. Rev. 42 2013 8612 8628
5. x sensors based on semiconducting metal oxide nanostructures: progress and perspectives Sens. Actuators B - Chem. 171 2012 25 42
6. L. Torsi, A. Dodabalapur, L. Sabbatini, and P. Zambonin Multi-parameter gas sensors based on organic thin-film-transistors Sens. Actuators B - Chem. 67 2000 312 316
7. L. Torsi, G.M. Farinola, F. Marinelli, M.C. Tanese, O.H. Omar, L. Valli, F. Babudri, F. Palmisano, P.G. Zambonin, and F. Naso A sensitivity-enhanced field-effect chiral sensor Nat. Mater. 7 2008 412 417
8. P.A. Bobbert, A. Sharma, S.G. Mathijssen, M. Kemerink, and D.M. de Leeuw Operational stability of organic field-effect transistors Adv. Mater. 24 2012 1146 1158
9. H. Sirringhaus Reliability of organic field-effect transistors Adv. Mater. 21 2009 3859 3873
10. M. Egginger, S. Bauer, R. Schwödiauer, H. Neugebauer, and N.S. Sariciftci Current versus gate voltage hysteresis in organic field effect transistors Monatsh. Chem. Chem. Mon. 140 2009 735 750
11. K. Takimiya, T. Yamamoto, H. Ebata, and T. Izawa Design strategy for air-stable organic semiconductors applicable to high-performance field-effect transistors Sci. Technol. Adv. Mater. 8 2007 273 276 (Pubitemid 46907810)
12. -1 J. Am. Chem. Soc. 128 2006 12604 12605 (Pubitemid 44527712)
13. E.D. Głowacki, M. Irimia-Vladu, M. Kaltenbrunner, J. Gsiorowski, M.S. White, U. Monkowius, G. Romanazzi, G.P. Suranna, P. Mastrorilli, and T. Sekitani Hydrogen-bonded semiconducting pigments for air-stable field-effect transistors Adv. Mater. 25 2013 1563 1569
14. T. Lei, Y. Cao, Y. Fan, C.-J. Liu, S.-C. Yuan, and J. Pei High-performance air-stable organic field-effect transistors: isoindigo-based conjugated polymers J. Am. Chem. Soc. 133 2011 6099 6101
15. H.-L. Cheng, W.-Q. Lin, and F.-C. Wu Effects of solvents and vacancies on the electrical hysteresis characteristics in regioregular poly (3-hexylthiophene) organic thin-film transistors Appl. Phys. Lett. 94 2009 223302
16. T. Richards, M. Bird, and H. Sirringhaus A quantitative analytical model for static dipolar disorder broadening of the density of states at organic heterointerfaces J. Chem. Phys. 128 2008 234905
17. A. Lovinger, D. Davis, R. Ruel, L. Torsi, A. Dodabalapur, and H. Katz Morphology of α-hexathienyl thin-film-transistor films J. Mater. Res. 10 1995 2958 2962
18. D. Hwang, M.S. Oh, J.M. Hwang, J.H. Kim, and S. Im Hysteresis mechanisms of pentacene thin-film transistors with polymer/oxide bilayer gate dielectrics Appl. Phys. Lett. 92 2008 013304
19. B. Crone, A. Dodabalapur, A. Gelperin, L. Torsi, H. Katz, A. Lovinger, and Z. Bao Electronic sensing of vapors with organic transistors Appl. Phys. Lett. 78 2001 2229 2231 (Pubitemid 33600544)
20. G. Wang, D. Moses, A.J. Heeger, H.-M. Zhang, M. Narasimhan, and R. Demaray Poly (3-hexylthiophene) field-effect transistors with high dielectric constant gate insulator J. Appl. Phys. 95 2004 316 322
21. D. Rep, A. Morpurgo, W. Sloof, and T. Klapwijk Mobile ionic impurities in organic semiconductors J. Appl. Phys. 93 2003 2082 2090
22. A. Salleo, and R. Street Light-induced bias stress reversal in polyfluorene thin-film transistors J. Appl. Phys. 94 2003 471 479
23. H. Lin, and S. Tiwari Localized charge trapping due to adsorption in nanotube field-effect transistor and its field-mediated transport Appl. Phys. Lett. 89 2006 0735071 0735073
24. M. Mattmann, D. Bechstein, C. Roman, K. Chikkadi, and C. Hierold Reduction of gate hysteresis above ambient temperature via ambipolar pulsed gate sweeps in carbon nanotube field effect transistors for sensor applications Appl. Phys. Lett. 97 2010 1531031 1531033
25. D. Estrada, S. Dutta, A. Liao, and E. Pop Reduction of hysteresis for carbon nanotube mobility measurements using pulsed characterization Nanotechnology 21 2010 085702
26. 2 gas detection Nanotechnology 21 2010 185501 185509
27. A. Salleo, F. Endicott, and R. Street Reversible and irreversible trapping at room temperature in poly (thiophene) thin-film transistors Appl. Phys. Lett. 86 2005 263505-263505-263503
28. T. Miyadera, T. Minari, S. Wang, and K. Tsukagoshi Dynamic bias stress current instability caused by charge trapping and detrapping in pentacene thin film transistors Appl. Phys. Lett. 93 2008 213302-213302-213303
29. B. Li, and D.N. Lambeth Chemical sensing using nanostructured polythiophene transistors Nano Lett. 8 2008 3563 3567
30. D. Duarte, D. Sharma, B. Cobb, and A. Dodabalapur Charge transport and trapping in organic field effect transistors exposed to polar analytes Appl. Phys. Lett. 98 2011 133302
31. L. Torsi, F. Marinelli, M.D. Angione, A. Dell'Aquila, N. Cioffi, E.D. Giglio, and L. Sabbatini Contact effects in organic thin-film transistor sensors Org. Electron. 10 2009 233 239
32. R. Masel Principles of Adsorption and Reaction on Solid Surfaces 1996 Wiley New York
33. W. Hu, Y. Liu, Y. Xu, S. Liu, S. Zhou, D. Zhu, B. Xu, C. Bai, and C. Wang The gas sensitivity of a metal-insulator-semiconductor field-effect-transistor based on Langmuir-Blodgett films of a new asymmetrically substituted phthalocyanine Thin Solid Films 360 2000 256 260 (Pubitemid 30564536)
34. H.E. Katz Chemically sensitive field-effect transistors and chemiresistors: new materials and device structures Electroanalysis 16 2004 1837 1842
35. 3 gas sensing with semiconductor polyaniline films Sens. Actuators B - Chem. 82 2002 14 23 (Pubitemid 34065047)