SCOPUS 정보 검색 플랫폼

Volumn 97, Issue 15, 2010, Pages

Reduction of gate hysteresis above ambient temperature via ambipolar pulsed gate sweeps in carbon nanotube field effect transistors for sensor applications

(5) Mattmann, Moritz a Bechstein, Daniel a Roman, Cosmin a Chikkadi, Kiran a Hierold, Christofer a

a ETH ZURICH (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATING POLARITY; AMBIENT TEMPERATURES; AMBIPOLAR; CARBON NANOTUBE FIELD EFFECT TRANSISTORS; GATE SWEEP; GATE VOLTAGES; HYSTERESIS BEHAVIOR; HYSTERESIS REDUCTION; SENSOR APPLICATIONS; TEMPERATURE RANGE;

CARBON NANOTUBES; CHARGE TRAPPING; HYSTERESIS; TEMPERATURE;

FIELD EFFECT TRANSISTORS;

EID: 77958096915 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3499363 Document Type: Article

Times cited : (22)

References (19)

1
- 34247152429
- Nano electromechanical sensors based on carbon nanotubes
- DOI 10.1016/j.sna.2007.02.007, PII S0924424707000520
- C. Hierold, A. Jungen, C. Stampfer, and T. Helbling, Sens. Actuators, A SAAPEB 0924-4247 136, 51 (2007). 10.1016/j.sna.2007.02.007 (Pubitemid 46590694)
- (2007) Sensors and Actuators, A: Physical , vol.136 , Issue.1 , pp. 51-61
- Hierold, C.¹ Jungen, A.² Stampfer, C.³ Helbling, T.⁴

2
- 34547286534
- Carbon nanotube field-effect-transistor-based biosensors
- DOI 10.1002/adma.200602043
- B. L. Allen, P. D. Kichambare, and A. Star, Adv. Mater. ADVMEW 0935-9648 19, 1439 (2007). 10.1002/adma.200602043 (Pubitemid 47153146)
- (2007) Advanced Materials , vol.19 , Issue.11 , pp. 1439-1451
- Allen, B.L.¹ Kichambare, P.D.² Star, A.³

3
- 53249136400
- ACIEF5 1433-7851,. 10.1002/anie.200704488
- D. R. Kauffman and A. Star, Angew. Chem., Int. Ed. ACIEF5 1433-7851 47, 6550 (2008). 10.1002/anie.200704488
- (2008) Angew. Chem., Int. Ed. , vol.47 , pp. 6550
- Kauffman, D.R.¹ Star, A.²

4
- 0001074022
- High-mobility Nanotube Transistor Memory
- DOI 10.1021/nl025577o
- M. S. Fuhrer, B. M. Kim, T. Durkop, and T. Brintlinger, Nano Lett. NALEFD 1530-6984 2, 755 (2002). 10.1021/nl025577o (Pubitemid 135706427)
- (2002) Nano Letters , vol.2 , Issue.7 , pp. 755-759
- Fuhrer, M.S.¹ Kim, B.M.² Durkop, T.³ Brintlinger, T.⁴

5
- 33747463629
- Localized charge trapping due to adsorption in nanotube field-effect transistor and its field-mediated transport
- DOI 10.1063/1.2337104
- H. Lin and S. Tiwari, Appl. Phys. Lett. APPLAB 0003-6951 89, 073507 (2006). 10.1063/1.2337104 (Pubitemid 44259981)
- (2006) Applied Physics Letters , vol.89 , Issue.7 , pp. 073507
- Lin, H.¹ Tiwari, S.²

6
- 15844399392
- Modeling hysteresis phenomena in nanotube field-effect transistors
- DOI 10.1109/TNANO.2004.842053
- A. Robert-Peillard and S. V. Rotkin, IEEE Trans. Nanotechnol. ZZZZZZ 1536-125X 4, 284 (2005). 10.1109/TNANO.2004.842053 (Pubitemid 40421664)
- (2005) IEEE Transactions on Nanotechnology , vol.4 , Issue.2 , pp. 284-288
- Robert-Peillard, A.¹ Rotkin, S.V.²

7
- 71549124655
- 10.1016/j.proche.2009.07.357
- M. Mattmann, T. Helbling, L. Durrer, C. Roman, R. Pohle, M. Fleischer, and C. Hierold, Procedia Chem. 1, 1431 (2009). 10.1016/j.proche.2009.07.357
- (2009) Procedia Chem. , vol.1 , pp. 1431
- Mattmann, M.¹ Helbling, T.² Durrer, L.³ Roman, C.⁴ Pohle, R.⁵ Fleischer, M.⁶ Hierold, C.⁷

8
- 77950923315
- NNOTER 0957-4484,. 10.1088/0957-4484/21/18/185501
- M. Mattmann, C. Roman, T. Helbling, D. Bechstein, L. Durrer, R. Pohle, M. Fleischer, and C. Hierold, Nanotechnology NNOTER 0957-4484 21, 185501 (2010). 10.1088/0957-4484/21/18/185501
- (2010) Nanotechnology , vol.21 , pp. 185501
- Mattmann, M.¹ Roman, C.² Helbling, T.³ Bechstein, D.⁴ Durrer, L.⁵ Pohle, R.⁶ Fleischer, M.⁷ Hierold, C.⁸

9
- 70249143943
- NNOTER 0957-4484,. 10.1088/0957-4484/20/34/345503
- M. H. Ervin, A. M. Dorsey, and N. M. Salaets, Nanotechnology NNOTER 0957-4484 20, 345503 (2009). 10.1088/0957-4484/20/34/345503
- (2009) Nanotechnology , vol.20 , pp. 345503
- Ervin, M.H.¹ Dorsey, A.M.² Salaets, N.M.³

10
- 70349694244
- NNOTER 0957-4484,. 10.1088/0957-4484/20/43/434010
- T. Helbling, C. Hierold, C. Roman, L. Durrer, M. Mattmann, and V. M. Bright, Nanotechnology NNOTER 0957-4484 20, 434010 (2009). 10.1088/0957-4484/20/ 43/434010
- (2009) Nanotechnology , vol.20 , pp. 434010
- Helbling, T.¹ Hierold, C.² Roman, C.³ Durrer, L.⁴ Mattmann, M.⁵ Bright, V.M.⁶

11
- 65549092723
- APPLAB 0003-6951,. 10.1063/1.3125259
- M. Mattmann, T. Helbling, L. Durrer, C. Roman, C. Hierold, R. Pohle, and M. Fleischer, Appl. Phys. Lett. APPLAB 0003-6951 94, 183502 (2009). 10.1063/1.3125259
- (2009) Appl. Phys. Lett. , vol.94 , pp. 183502
- Mattmann, M.¹ Helbling, T.² Durrer, L.³ Roman, C.⁴ Hierold, C.⁵ Pohle, R.⁶ Fleischer, M.⁷

12
- 44649168154
- SABCEB 0925-4005,. 10.1016/j.snb.2007.11.036
- T. Helbling, R. Pohle, L. Durrer, C. Stampfer, C. Roman, A. Jungen, M. Fleischer, and C. Hierold, Sens. Actuators B SABCEB 0925-4005 132, 491 (2008). 10.1016/j.snb.2007.11.036
- (2008) Sens. Actuators B , vol.132 , pp. 491
- Helbling, T.¹ Pohle, R.² Durrer, L.³ Stampfer, C.⁴ Roman, C.⁵ Jungen, A.⁶ Fleischer, M.⁷ Hierold, C.⁸

13
- 44649170297
- SABCEB 0925-4005,. 10.1016/j.snb.2007.11.007
- L. Durrer, T. Helbling, C. Zenger, A. Jungen, C. Stampfer, and C. Hierold, Sens. Actuators B SABCEB 0925-4005 132, 485 (2008). 10.1016/j.snb.2007.11.007
- (2008) Sens. Actuators B , vol.132 , pp. 485
- Durrer, L.¹ Helbling, T.² Zenger, C.³ Jungen, A.⁴ Stampfer, C.⁵ Hierold, C.⁶

14
- 70349125918
- NNOTER 0957-4484,. 10.1088/0957-4484/20/35/355601
- L. Durrer, J. Greenwald, T. Helbling, M. Muoth, R. Riek, and C. Hierold, Nanotechnology NNOTER 0957-4484 20, 355601 (2009). 10.1088/0957-4484/20/35/ 355601
- (2009) Nanotechnology , vol.20 , pp. 355601
- Durrer, L.¹ Greenwald, J.² Helbling, T.³ Muoth, M.⁴ Riek, R.⁵ Hierold, C.⁶

15
- 77958091393
- note
- 2 atmosphere at low pressure, oxygen molecules are mostly absent at the CNFET metal contacts, turning CNFETs into n-type, which was shown by Heinze et al. (Ref.).

16
- 0037009625
- PRLTAO 0031-9007,. 10.1103/PhysRevLett.89.106801
- S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and P. Avouris, Phys. Rev. Lett. PRLTAO 0031-9007 89, 106801 (2002). 10.1103/PhysRevLett.89.106801
- (2002) Phys. Rev. Lett. , vol.89 , pp. 106801
- Heinze, S.¹ Tersoff, J.² Martel, R.³ Derycke, V.⁴ Appenzeller, J.⁵ Avouris, P.⁶

17
- 0042948502
- Hysteresis caused by water molecules in carbon nanotube field-effect transistors
- DOI 10.1021/nl0259232
- W. Kim, A. Javey, O. Vermesh, Q. Wang, Y. Li, and H. Dai, Nano Lett. NALEFD 1530-6984 3, 193 (2003). 10.1021/nl0259232 (Pubitemid 37130535)
- (2003) Nano Letters , vol.3 , Issue.2 , pp. 193-198
- Kim, W.¹ Javey, A.² Vermesh, O.³ Wang, Q.⁴ Li, Y.⁵ Dai, H.⁶

18
- 45749152826
- edited by E. Gusev (Springer, New York)
- D. A. Buchanan and D. Felnhofer, in Defects in High- k Gate Dielectric Stacks, edited by, E. Gusev, (Springer, New York, 2006).
- (2006) Defects in High-in k Gate Dielectric Stacks
- Buchanan, D.A.¹ Felnhofer, D.²

19
- 76249084900
- NNOTER 0957-4484,. 10.1088/0957-4484/21/8/085702
- D. Estrada, S. Dutta, A. Liao, and E. Pop, Nanotechnology NNOTER 0957-4484 21, 085702 (2010). 10.1088/0957-4484/21/8/085702
- (2010) Nanotechnology , vol.21 , pp. 085702
- Estrada, D.¹ Dutta, S.² Liao, A.³ Pop, E.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.