Gas sensitivity of a metal-insulator-semiconductor field-effect-transistor based on Langmuir-Blodgett films of a new asymmetrically substituted phthalocyanine

Thin Solid Films

Volumn 360, Issue 1-2, 2000, Pages 256-260

  Hu, Wenping ^a   Liu, Yunqi ^a   Xu, Yu ^a   Liu, Shenggao ^a   Zhou, Shuqin ^a   Zhu, Daoben ^a   Xu, Bo ^a   Bai, Chunli ^a   Wang, Cheng ^a  

^a INSTITUTE OF CHEMISTRY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION ISOTHERMS; ATMOSPHERIC COMPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; GASES; MISFET DEVICES; NITROGEN OXIDES; SENSITIVITY ANALYSIS; SENSORS; THIN FILMS;

AMINO TRI TERT BUTYL PHTHALOCYANICS; DRAIN SOURCE CURRENTS; ORGANIC SEMICONDUCTOR;

LANGMUIR BLODGETT FILMS;

EID: 0034140049     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)01081-0     Document Type: Article

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