A quantitative analytical model for static dipolar disorder broadening of the density of states at organic heterointerfaces

Journal of Chemical Physics

Volumn 128, Issue 23, 2008, Pages

  Richards, Tim ^a   Bird, Matthew ^a   Sirringhaus, Henning ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; GATE DIELECTRICS; GATES (TRANSISTOR); POLYMERS; SEMICONDUCTOR MATERIALS;

AMERICAN INSTITUTE OF PHYSICS (AIP); ANALYTICAL MODELLING; DENSITY OF STATES (DOF); DEVICE APPLICATIONS; DIELECTRIC CONSTANTS; DIPOLAR DISORDER; FIELD-EFFECT MOBILITY (FEM); GATE VOLTAGE DEPENDENCE; HETERO-INTERFACES; MOBILITY MODELING; ORGANIC SEMICONDUCTOR; POLYMER GATE DIELECTRICS;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 47249124549     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2937729     Document Type: Article

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