Magnetoelectric devices for spintronics

Annual Review of Materials Research

Volumn 44, Issue , 2014, Pages 91-116

  Fusil, S ^b   Garcia, V ^b   Barthelemy A ^b   Bibes, M ^a  

^a CNRS   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

Domain structure; Magnetic anisotropy; Magnetoresistance; Multiferroic; Spintronics

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; FERROELECTRIC MATERIALS; HYBRID MATERIALS; MAGNETIC ANISOTROPY; MAGNETIC DEVICES; MAGNETORESISTANCE; NANOTECHNOLOGY;

DOMAIN STRUCTURE; ELECTRICAL CONTROL; ELECTROSTATIC EFFECT; MAGNETIC TUNNEL JUNCTION; MAGNETOELECTRIC DEVICES; MULTIFERROIC MATERIALS; MULTIFERROICS; ORDERING TEMPERATURE;

MAGNETOELECTRONICS;

EID: 84903975748     PISSN: 15317331     EISSN: None     Source Type: Book Series    
DOI: 10.1146/annurev-matsci-070813-113315     Document Type: Article

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