Magnetoelectric charge trap memory

Nano Letters

Volumn 12, Issue 3, 2012, Pages 1437-1442

  Bauer, Uwe ^a   Przybylski, Marek ^b   Kirschner, Jürgen ^b   Beach, Geoffrey S D ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

charge trap flash memory; electric field control of magnetic properties; magneto optical writing, magnetic anisotropy; Magnetoelectric effect

Indexed keywords

CHARGE TRAP; CHARGE TRAP FLASH MEMORIES; ELECTRIC-FIELD CONTROL; FOCUSED LASER BEAMS; ITS EFFICIENCIES; MAGNETIC STATE; MAGNETO-OPTICAL; METAL FILM; NONVOLATILITY; OPTICAL CONTROL; TRAPPED CHARGE;

ELECTRIC FIELDS; FLASH MEMORY; MAGNETIC ANISOTROPY; MAGNETOELECTRIC EFFECTS; MAGNETOSTRICTIVE DEVICES;

CHARGE TRAPPING;

NANOMATERIAL;

ARTICLE; CHEMISTRY; DATA STORAGE DEVICE; ELECTRIC CAPACITANCE; ELECTROMAGNETIC FIELD; EQUIPMENT; EQUIPMENT DESIGN; MAGNET; MATERIALS TESTING; STATIC ELECTRICITY; ULTRASTRUCTURE;

COMPUTER STORAGE DEVICES; ELECTRIC CAPACITANCE; ELECTROMAGNETIC FIELDS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MAGNETS; MATERIALS TESTING; NANOSTRUCTURES; STATIC ELECTRICITY;

EID: 84858201481     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl204114t     Document Type: Article

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