Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films

Applied Physics Letters

Volumn 89, Issue 24, 2006, Pages

  Bea H ^a   Bibes, M ^b   Cherifi, S ^c   Nolting, F ^d   Warot Fonrose, B ^e   Fusil, S ^a   Herranz, G ^a   Deranlot, C ^a   Jacquet, E ^a   Bouzehouane, K ^a   Barthelemy A ^a  

^a UNITÉ MIXTE DE PHYSIQUE CNRS THALES   (France)

^b CNRS   (France)

^c LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^d PAUL SCHERRER INSTITUTE   (Switzerland)

^e CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; ELECTRON TUNNELING; ELECTRONIC STRUCTURE; MAGNETORESISTANCE; PARAMAGNETIC RESONANCE; THERMAL EFFECTS;

ANTIFERROMAGNETIC SPIN STRUCTURES; EPITAXIAL FILMS; SPINTRONICS; TUNNEL MAGNETORESISTANCE;

THIN FILMS;

EID: 33845777111     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2402204     Document Type: Article

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