High-density magnetoresistive random access memory operating at ultralow voltage at room temperature

Nature Communications

Volumn 2, Issue 1, 2011, Pages

  Hu, Jia Mian ^a,b   Li, Zheng ^a   Chen, Long Qing ^b   Nan, Ce Wen ^a  

^a TSINGHUA UNIVERSITY   (China)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; ELECTRIC POTENTIAL; ENERGY; MAGNETORESISTIVE RANDOM ACCESS MEMORY; NANOTECHNOLOGY; ROOM TEMPERATURE; SIGNAL TRANSDUCTION; SIMULATION; STORAGE; THERMOSTABILITY; VELOCITY; WRITING;

EID: 82555186372     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms1564     Document Type: Article

References (46)

1. International Technology Roadmap for Semiconductors, 2007 Edition Emerging Research Devices, http://www.itrs.net (accessed October 2011).
2. Chappert, C., Fert, A. & Van Dau, F. N. The emergence of spin electronics in data storage. Nat. Mater. 6, 813-823 (2007). (Pubitemid 350050577)
3. Zhu, J. G. Magnetoresistive random access memory: the path to competitiveness and scalability. Proc. IEEE 96, 1786-1798 (2008).
4. Binek, C. & Doudin, B. Magnetoelectronics with magnetoelectrics. J. Phys: Condens. Matter 17, L39-L44 (2005). (Pubitemid 40121755)
5. Dieny, B. et al. Magnetotransport properties of magnetically soft spin-valve structures. J. Appl. Phys. 69, 4774 (1991).
6. Moodera, J. S., Kinder, L. R., Wong, T. M. & Meservey, R. Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions. Phys. Rev. Lett. 74, 3273 (1995).
7. Chen, X., Hochstrat, A., Borisov, P. & Kleemann, W. Magnetoelectric exchange bias systems in spintronics. Appl. Phys. Lett. 89, 202508 (2006).
8. Bibes, M. & Barthélémy, A. Multiferroics: towards a magnetoelectric memory. Nat. Mater. 7, 425-426 (2008). (Pubitemid 351733436)
9. Garcia, V. et al. Ferroelectric control of spin polarization. Science 327, 1106-1110 (2010).
10. Liu, M. et al. Giant electric field tuning of magnetic properties in multiferroic ferrite/ferroelectric heterostructures. Adv. Funct. Mater. 19, 1826-1831 (2009).
11. Hu, J.-M. & Nan, C. W. Electric-field-induced magnetic easy-axis reorientation in ferromagnetic/ferroelectric layered heterostructures. Phys. Rev. B 80, 224416 (2009).
12. Ma, J., Hu, J. M., Li, Z. & Nan, C.-W. Recent progress in multiferroic magnetoelectric composites: from bulk to thin films. Adv. Mater. 23, 1062-1087 (2011).
13. x heterostructure. Appl. Phys. Lett. 98, 012504 (2011).
14. Chu, Y. H. et al. Electric-field control of local ferromagnetism using a magnetoelectric multiferroic. Nat. Mater. 7, 478-482 (2008).
15. Hu, J.-M., Li, Z., Wang, J. & Nan, C. W. Electric-field control of strain-mediated magnetoelectric random access memory. J. Appl. Phys. 107, 093912 (2010).
16. Pertsev, N. A. & Kohlstedt, H. Resistive switching via the converse magnetoelectric effect in ferromagnetic multilayers on ferroelectric substrates. Nanotechnology 21, 475202 (2010).
17. Cavaco, C., van Kampen, M., Lagae, L. & Borghs, G. A room-temperature electrical field-controlled magnetic memory cell. J. Mater. Res. 22, 2111-2115 (2007). (Pubitemid 47299607)
18. Wolf, S. A. et al. Spintronics: a spin-based electronics vision for the future. Science 294, 1488-1495 (2001). (Pubitemid 33063913)
19. Hu, J.-M., Nan, C.-W. & Chen, L.-Q. Size-dependent electric voltage controlled magnetic anisotropy in multiferroic heterostructures: interface-charge and strain comediated magnetoelectric coupling. Phys. Rev. B 83, 134408 (2011).
20. Ikeda, S. et al. A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction. Nat. Mater. 9, 721-724 (2010).
21. Ohno, H. A window on the future of spintronics. Nat. Mater. 9, 952-954 (2010).
22. Maruyama, T. et al. Large voltage-induced magnetic anisotropy change in a few atomic layers of iron. Nat. Nanotech. 4, 158-161 (2009).
23. Bedau, D. et al. Ultrafast spin-transfer switching in spin valve nanopillars with perpendicular anisotropy. Appl. Phys. Lett. 96, 022514 (2010).
24. Park, S.-E. & Shrout, T. R. Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals. J. Appl. Phys. 82, 1804 (1997).
25. Huai, Y. M. Spin-transfer torque MRAM (STT-MRAM): challenges and prospects. AAPPS Bulletin 18, 33-40 (2008).
26. Chung, A., Deen, J., Lee, J.-S. & Meyyappan, M. Nanoscale memory devices. Nanotechnology 21, 412001 (2010).
27. Zhang, J. X. & Chen, L. Q. Phase-field microelasticity theory and micromagnetic simulations of domain structures in giant magnetostrictive materials. Acta Mater. 53, 2845-2855 (2005). (Pubitemid 40556711)
28. Khachaturyan, A. G. Theory of Structural Transformation in Solids (Wiley, 1983).
29. Pertsev, N. A., Kohlstedt, H. & Dkhil, B. Strong enhancement of the direct magnetoelectric effect in strained ferroelectric-ferromagnetic thin-film heterostructures. Phys. Rev. B 80, 054102 (2009).
30. Schlom, D. G. et al. Strain tuning of ferroelectric thin films. Annu. Rev. Mater. Res. 37, 589-626 (2007). (Pubitemid 47497657)
31. Hu, J.-M., Sheng, G., Zhang, J. X., Nan, C. W. & Chen, L. Q. Phase-field simulation of strain-induced domain switching in magnetic thin films. Appl. Phys. Lett. 98, 112505 (2011).
32. Chen, L. Q. Phase-field method of phase transitions/domain structures in ferroelectric thin films: a review. J. Am. Ceram. Soc. 91, 1835-1844 (2008).
33. Stroh, A. N. Steady state problems in anisotropic elasticity. J. Math. Phys. 41, 77-103 (1962).
34. Chen, L. Q. & Shen, J. Applications of semi-implicit Fourier-spectral method to phase field equations. Comput. Phys. Commun. 108, 147-158 (1998). (Pubitemid 128392371)
35. Vaz, C. A. F. et al. Magnetism in ultrathin film structures. Rep. Prog. Phys. 71, 056501 (2008).
36. Walowski, J. et al. Intrinsic and non-local Gilbert damping in polycrystalline nickel studied by Ti: sapphire laser fs spectroscopy. J. Phys. D: Appl. Phys. 41, 164016 (2008).
37. Kohlstedt, H. et al. Current status and challenges of ferroelectric memory devices. Microelectron. Eng. 80, 296-304 (2005). (Pubitemid 40753099)
38. Li, Y. L., Hu, S. Y., Liu, Z. K. & Chen, L. Q. Phase-field model of domain structures in ferroelectric thin films. Appl. Phys. Lett. 78, 3878 (2001). (Pubitemid 32583942)
39. Schröder, K. Stress operated random access, high-speed magnetic memory. J. Appl. Phys. 53, 2759 (1982).
40. Mohammad Salehi, F. et al. Magnetization dynamics, Bennett clocking and associated energy dissipation in multiferroic logic. Nanotechnology 22, 155201 (2011).
41. International Technology Roadmap for Semiconductors, 2010 Future Memory Devices Workshop Summary, http://www.itrs.net/ (accessed October 2011).
42. Atulasimha, J. & Bandyopadhyay, S. Bennett clocking of nanomagnetic logic using multiferroic single-domain nanomagnets. Appl. Phys. Lett. 97, 173105 (2010).
43. Dean, J., Bryan, M. T., Schrefl, T. & Allwood, D. A. Stress-based control of magnetic nanowire domain walls in artificial multiferroic systems. J. Appl. Phys. 109, 023915 (2011).
44. Callegaro, L. & Puppin, E. Stress dependence of coercivity in Ni films: thin film to bulk transition. Appl. Phys. Lett. 68, 1279 (1996).
45. Natarajan, S., Chung, S., Paris, L. & Keshavarzi, A. Searching for the dream embedded memory. IEEE Solid-State Circuits Magazine 1, 34-44 (2009).
46. Driskill-Smith, A. et al. Latest advances and roadmap for in-plane and perpendicular STT-RAM. in Memory Workshop (IMW), 3rd IEEE International. 1-3 (2011).