Electric-field-induced change of the magnetoresistance in the multiferroic spin-valve based on BiFeO3 film

IEEE Transactions on Magnetics

Volumn 47, Issue 10, 2011, Pages 3139-3142

  Zhang, X ^a   Wang, Y H ^a   Zhang, D L ^a   Zhang, G Q ^a   Yang, H L ^a   Miao, J ^a   Xu, X G ^a   Jiang, Y ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

Author keywords

Electric field control of magnetization; magnetoelectric coupling; multiferroic spin valve

Indexed keywords

BISMUTH COMPOUNDS; ELECTRIC FIELDS; MAGNETIC STORAGE; MAGNETIZATION; MAGNETORESISTANCE; SILICON COMPOUNDS;

BOTTOM ELECTRODES; ELECTRIC FIELD-INDUCED CHANGES; ELECTRIC-FIELD CONTROL; FERROELECTRIC PROPERTY; FUNCTIONAL DEVICES; MAGNETOELECTRIC COUPLINGS; REMNANT POLARIZATIONS; SPIN VALVE;

MULTIFERROICS;

EID: 80053476267     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2011.2148102     Document Type: Article

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