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Volumn 9048, Issue , 2014, Pages

Evaluation of EUV resist performance below 20nm CD using helium ion lithography

Author keywords

Energy transfer; EUV lithography; EUV resist characterization; Helium Ion Microscope; Lithography; Proximity effect; Scanning Helium Ion Beam Lithography

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ENERGY TRANSFER; EXTREME ULTRAVIOLET LITHOGRAPHY; ION BEAM LITHOGRAPHY; ION BEAMS; LITHOGRAPHY;

EID: 84902150141     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.2046917     Document Type: Conference Paper
Times cited : (15)

References (18)
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    • Secondary electron emission spectra and energy selective imaging in helium ion microscope
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    • Henke, B.L., Gullikson, E.M. and Davis, J.C. "X-ray interactions: photoabsorption, scattering, transmission, and reflection at E=50-30000 eV, Z=1-92," [Atomic Data and Nuclear Data Tables] Vol. 54 (no.2), 181-342 (July 1993). (http://henke.lbl.gov/optical-constants/).
    • (1993) Atomic Data and Nuclear Data Tables , vol.54 , Issue.2 , pp. 181-342
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    • Preliminary investigation of shot noise, dose, and focus latitude for E-beam direct write
    • Brodie, A., Kojima, S., McCord, M., Grella, L., Gubiotti, T., and Bevis, C. "Preliminary investigation of shot noise, dose, and focus latitude for E-Beam Direct Write," Proc. SPIE 8680, 868029 (2013).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.