An investigation of contact resistance between metal electrodes and amorphous gallium-indium-zinc oxide (a-GIZO) thin-film transistors

Thin Solid Films

Volumn 518, Issue 22, 2010, Pages 6357-6360

  Kim, Woong Sun ^a   Moon, Yeon Keon ^a   Kim, Kyung Taek ^a   Lee, Je Hun ^b   Ahn, Byung Du ^b   Park, Jong Wan ^a  

^a Hanyang University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Amorphous indium gallium zinc oxide; Amorphous oxide semiconductor; Contact resistance; Thin film transistors; Transmission line method

Indexed keywords

AMORPHOUS INDIUM-GALLIUM-ZINC OXIDE; AMORPHOUS OXIDE SEMICONDUCTOR; CHANNEL CONDUCTANCE; CHANNEL LENGTH; ELECTRODE MATERIAL; FIELD-EFFECT MOBILITIES; INDIUM ZINC OXIDES; LOW DRAIN VOLTAGES; METAL ELECTRODES; OHMIC CHARACTERISTICS; TRANSFER CHARACTERISTICS; TRANSFER LENGTHS; TRANSMISSION LINE METHOD; TRANSMISSION LINE METHODS;

AMORPHOUS FILMS; CONTACT RESISTANCE; ELECTRIC LINES; ELECTRODES; SEMICONDUCTING INDIUM; THIN FILMS; TRANSMISSION LINE THEORY; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 77956061676     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.02.044     Document Type: Conference Paper

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