Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology

Optical Materials Express

Volumn 4, Issue 5, 2014, Pages 1067-1076

  Guo, Daoyou ^a   Wu, Zhenping ^a   Li, Peigang ^a,b   An, Yuehua ^a   Liu, Han ^b   Guo, Xuncai ^a   Yan, Hui ^a   Wang, Guofeng ^b   Sun, Changlong ^a   Li, Linghong ^c   Tang, Weihua ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b ZHEJIANG SCI TECH UNIVERSITY   (China)

^c STATE UNIVERSITY OF NEW YORK AT POTSDAM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; GALLIUM; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; PHOTONS; SAPPHIRE; THIN FILMS;

254 NM UV LIGHT; GROWTH PARAMETERS; LASER MOLECULAR BEAM EPITAXY; METAL-SEMICONDUCTOR-METAL STRUCTURES; PHOTORESPONSES; SAPPHIRE SUBSTRATES; SOLAR-BLIND PHOTODETECTORS; ULTRAVIOLET-VISIBLE ABSORPTION SPECTRUM;

GALLIUM ALLOYS;

EID: 84901453877     PISSN: None     EISSN: 21593930     Source Type: Journal    
DOI: 10.1364/OME.4.001067     Document Type: Article

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