ZnO photoconductive sensors epitaxially grown on sapphire substrates

Sensors and Actuators, A: Physical

Volumn 140, Issue 1, 2007, Pages 60-64

  Chang, S P ^a   Chang, S J ^a   Chiou, Y Z ^b   Lu, C Y ^a   Lin, T K ^a   Lin, Y C ^a   Kuo, C F ^a   Chang, H M ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Gain; Photoconductive sensor; Spectra response; ZnO

Indexed keywords

ELECTRIC FIELDS; ELECTRODES; EPITAXIAL GROWTH; GOLD COMPOUNDS; NICKEL COMPOUNDS; PHOTOCONDUCTIVITY; QUANTUM EFFICIENCY; SAPPHIRE; ZINC OXIDE;

DECAY TRANSIENT; ELECTRIC FIELD DEPENDENT PHOTOCONDUCTIVE GAIN; SPECTRA RESPONSE; TIME CONSTANT;

SENSORS;

EID: 34548507512     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2007.06.012     Document Type: Article

References (30)

1. Chiou Y.Z., Su Y.K., Chang S.J., Gong J., Lin Y.C., Liu S.H., and Chang C.S. IEEE J. Quan. Electron. 39 (2003) 681
2. Monroy E., Muňoz E., Sánchez F.J., Calley F., Calleja E., Beaumont B., Gibart P., Muňoz J.A., and Cussó F. Semicond. Sci. Technol. 13 (1998) 1042
3. Chen J., Zhang Y., Skromme B.J., Akimoto K., and Pachuta S.J. J. Appl. Phys. 78 (1995) 5109
4. Kato H., Sano M., Miyamoto K., and Yao T. Jpn. J. Appl. Phys. 42 (2003) L1002
5. Zheng X.G., Li Q.S., Hub W., Chen D., Zhang N., Shia M.J., Wang J.J., and Zhang L.C. J. Lumin. 122/123 (2007) 198
6. Barnes T.M., Leaf J., Hand S., Fry C., and Wolden C.A. J. Appl. Phys. 96 (2004) 7036
7. Look D.C. Mater. Sci. Eng. B 80 (2001) 383
8. Dong J.W., Osinsky A., Hertog B., Dabiran A.M., Chow P.P., Heo Y.W., Norton D.P., and Pearton S.J. J. Electron. Mater. 34 (2005) 416
9. Bian J., Liu W., Liang H., Hu L., Sun J., Luo Y., and Du G. Chem. Phys. Lett. 430 (2006) 183
10. Alivov Y.I., Kalinina E.V., Cherenkov A.E., Look D.C., Ataev B.M., Omaev A.K., Chukichev M.V., and Bagnall D.M. Appl. Phys. Lett. 83 (2003) 4719
11. Aghamalyan N.R., Hovsepyan R.K., Poghosyan A.R., and Lazaryan V.G. Proc. SPIE Int. Soc. Opt. Eng. 5560 (2004) 235
12. Liang S., Sheng H., Liu Y., Huo Z., Lu Y., and Shen H. J. Cryst. Growth 225 (2001) 110
13. Mang A., Reimann K., and Rübenacke S. Solid State Comm. 94 (1995) 251
14. Ohta H., Kamiya M., Kamiya T., Hirano M., and Hosono H. Thin Solid Films 445 (2003) 317
15. Basak D., Amin G., Mallik B., Paul G.K., and Sen S.K. J. Cryst. Growth 256 (2003) 73
16. Hsu C.L., Chang S.J., Lin Y.R., Li P.C., Lin T.S., Tsai S.Y., Lu T.H., and Chen I.C. Chem. Phys. Lett. 416 (2005) 75
17. Liu M., and Kim H.K. Appl. Phys. Lett. 84 (2004) 173
18. Chen Y., Ko H.J., Hong S.K., and Yao T. Appl. Phys. Lett. 76 (2000) 559
19. Vigue F., de Mierry P., Faurie J.P., Monroy E., Calle F., and Munoz E. Electron. Lett. 36 (2000) 826
20. Yang H.S., Norton D.P., Pearton S.J., and Ren F. Appl. Phys. Lett. 87 (2005) 212106
21. Sze S.M. Semiconduct. Dev. Phys. Technol. (1936)
22. Salvatori S., Rossi M.C., Galluzzi F., Pace E., Ascarelli P., and Marinelli M. Diam. Relat. Mater. 7 (1998) 811
23. Baik S.J., Jang J.H., Lee C.H., Cho W.Y., and Lim K.S. Appl. Phys. Lett. 70 (1997) 3516
24. Li Q.H., Wan Q., Liang Y.X., and Wang T.H. Appl. Phys. Lett. 84 (2004) 4556
25. Xu J.T., You D., Tang Y.W., Kang Y., Li X., Li X.Y., and Gong H.M. Appl. Phys. Lett. 88 (2006) 072106
26. Salis M., Anedda A., Quarati F., Blue A.J., and Cunningham W.J. J. Appl. Phys. 97 (2005) 033709
27. Poti B., Passaseo A., Lomascolo M., Cingolani R., and De Vittorio M. Appl. Phys. Lett. 85 (2004) 6083
28. Lin T.K., Chang S.J., Su Y.K., Huang B.R., Fujita M., and Horikoshi Y. J. Cryst. Growth 281 (2005) 513
29. Sharma P., Sreenivas K., and Rao K.V. J. Appl. Phys. 93 (2003) 3963
30. Young S.J., Ji L.W., Chang S.J., Liang S.H., Lam K.T., Fang T.H., Du X.L., and Xue Q.K. Sensor. Actuat. A 135 (2007) 529