Effects of crystallinity and point defects on optoelectronic applications of β-Ga2O3 epilayers

Optics Express

Volumn 21, Issue 21, 2013, Pages 24599-24610

  Ravadgar, Parvaneh ^a   Horng, Ray Hua ^a,b   Yao, Shu De ^c   Lee, Hsin Ying ^a   Wu, Bing Rui ^a   Ou, Sin Liang ^a   Tu, Li Wei ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^c PEKING UNIVERSITY   (China)

^d NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EPILAYERS; GALLIUM;

CHEMICAL COMPOSITIONS; CRYSTALLINE STRUCTURE; CRYSTALLINITIES; HIGH RESOLUTION; OPTOELECTRONIC APPLICATIONS; PHOTORESPONSIVITY; X-RAY TECHNIQUES;

POINT DEFECTS;

EID: 84886421763     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.21.024599     Document Type: Article

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