Trap-related photoconductivity in ZnO epilayers

Journal of Electronic Materials

Volumn 35, Issue 4, 2006, Pages 543-549

  Murphy, T E ^a   Moazzami, K ^a   Phillips, J D ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Persistent photoconductivity; Trap density; Trap level; ZnO

Indexed keywords

PERSISTENT PHOTOCONDUCTIVITY; RATE EQUATION MODEL; TRANSIENT DECAY TIME CONSTANTS; TRAP DENSITY; TRAP LEVEL; ZNO EPILAYERS;

ELECTRON ENERGY LEVELS; EQUATIONS OF STATE; HOLE TRAPS; MATHEMATICAL MODELS; SURFACE PROPERTIES; ZINC OXIDE;

PHOTOCONDUCTIVITY;

EID: 33646726991     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0097-x     Document Type: Conference Paper

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