Ga2/ O3/AlGaN/GaN Heterostructure Ultraviolet Three-Band Photodetector

IEEE Sensors Journal

Volumn 13, Issue 9, 2013, Pages 3462-3467

  Huang, Zheng Da ^a   Weng, Wen Yin ^a   Chang, Shoou Jinn ^a   Chiu, Chiu Jung ^a   Hsueh, Ting Jen ^b   Wu, San Lein ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

Ga2 O3; AlGaN; GaN; photodetectors

Indexed keywords

ALGAN; APPLIED BIAS; CONTRAST RATIO; GAN; OPERATION MODE; PHOTODETECTORS (PDS); ULTRA-VIOLET;

GALLIUM NITRIDE; PHOTONS;

PHOTODETECTORS;

EID: 84882391930     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2013.2264457     Document Type: Article

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