Multifunction metrology platform for photovoltaics

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2011, Pages 001748-001753

  Wilson, M ^a   D'Amico, J ^a   Savtchouk, A ^a   Edelman, P ^a   Findlay, A ^a   Jastrzebski, L ^a   Lagowski, J ^a   Kis Szabo, K ^b   Korsos, F ^b   Toth, A ^b   Pap, A ^b   Kopecek, R ^c   Peter, K ^c  

^a Semilab SDI LLC   (United States)

^b SEMILAB SEMICONDUCTOR PHYSICS LABORATORY CO LTD   (Hungary)

^c ISC Konstanz   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BULK DEFECTS; COMPLEX PROCESSES; COST EFFECTIVE; FIELD-EFFECT; INTERFACE TRAP DENSITY; LIGHT-INDUCED DEGRADATION; MEASUREMENT TECHNIQUES; NON-CONTACT; PHOTOVOLTAICS; SURFACE BARRIER; SURFACE RECOMBINATIONS; WAFER SCALE;

DEGRADATION; PASSIVATION; PHOTOVOLTAIC EFFECTS; SILICON WAFERS;

UNITS OF MEASUREMENT;

EID: 84861032276     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6186292     Document Type: Conference Paper

References (12)

1. M. Wilson et al., "The Present Status and Recent Advancements in Corona-Kelvin Non-contact Electrical Metrology of Dielectrics for IC-manufacturing", ECS Transactions, 3 (3) 3-24 (2006).
2. M. Wilson et al., "Digital SPV Diffusion Length Metrology (E8-Fe) for Ultra-High Purity Silicon Wafers", ECS Transactions, 16 (6) 285-301 (2008).
3. P. Edleman et al., "Non-contact C-V measurements of ultra thin dielectrics", Eur. Phys. J. Appl. Phys. 27, 495-498 (2004).
4. th EPSEC, 5-9 Sept. 2011, Hamburg, Germany.
5. M. Wilson et al., "QSS-μPCD Measurement of Lifetime in Silicon PV Wafers: Advantages and New Applications", to be published in 2011 Silicon PV conference proceedings, April 17-20, 2011 Freiberg, Germany.
6. M. Wilson et al., "Accelerated Light-Induced Degradation (ALID) for Monitoring of Defects in PV Silicon Wafers and Solar Cells", J. Electron. Mater., 39 (6) 642-647 (2010).
7. D.K. Schroder, "Semiconductor Material and Device Characterization", (Wiley- Interscience, Hoboken, New Jersey 2006).
8. M. Wilson et al., "Novel Noncontact Approach to Monitoring the Field-Effect Passivation of Emitters", to be published in 2011 Silicon PV conference proceedings, April 17-20, 2011 Freiberg, Germany.
9. M. Wilson et al., "Emitter Passivation by Charge Injection", to be published in 37th IEEE Photovoltaic Specialist Conference, June 19-24, 2011, Seattle, Washington.
10. J. Lagowski et al., "Method for the measurement of long minority carrier diffusion lengths exceeding wafer thickness", Appl. Phys. Lett. 63, 2902 (1993).
11. D.E. Kane and R.M. Swanson "Measurement of the Emitter Saturation Current by a Contactless Photoconductivity Decay Method", Proc. 18th IEEE Photovoltaic Specialist Cont., Las Vegas, 1985, IEEE, New York, 1985, p. 578-583.
12. 3/c-Si interface", to be published in Energy Procedia, 2011 Silicon PV conference proceedings, April 17-20, 2011 Freiberg, Germany.