The influence of silicon nitride layer parameters on the implied V OC of CZ silicon wafers after annealing

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2009, Pages 001795-001800

  Hameiri, Z ^a   Mai, L ^a   Borojevic, N ^a   Javid, S ^a   Tjahjono, B ^a   Wang, S ^a   Sproul, A ^a   Wenham, S ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CELL TECHNOLOGY; COMMERCIAL GRADE; CZ SILICON; DOUBLE SIDED; FILM PARAMETERS; P-TYPE; P-TYPE SI; PASSIVATION POTENTIALS; POST DEPOSITION ANNEALING;

ANNEALING; CHEMICAL VAPOR DEPOSITION; PASSIVATION; REFRACTIVE INDEX; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; VOLATILE ORGANIC COMPOUNDS;

SILICON WAFERS;

EID: 77951543833     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2009.5411485     Document Type: Conference Paper

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