SCOPUS 정보 검색 플랫폼

Semiconductor Science and Technology

Volumn 15, Issue 3, 2000, Pages 267-269

Novel BaTiO3/SiO2-based voltage-programmable link applicable to on-chip programmable devices

(3) Leet, J S a Bae, Y H a Lee, Y H b

a Uiduk University (South Korea)

b Kyungpook National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; AMORPHOUS FILMS; BARIUM TITANATE; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; FILM PREPARATION; MOSFET DEVICES; SILICA; TITANIUM COMPOUNDS;

VOLTAGE-PROGRAMMABLE LINKS (VPL);

MICROPROCESSOR CHIPS;

EID: 0342656552 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/15/3/307 Document Type: Article

Times cited : (2)

References (13)

1
- 84939701758
- A 1024-bit fused-link CMOS PROM
- February
- Schroder J E and Gosline R L 1977 A 1024-bit fused-link CMOS PROM ISSCC Dig. Tech. Pap. (February) 190
- (1977) ISSCC Dig. Tech. Pap. , pp. 190
- Schroder, J.E.¹ Gosline, R.L.²

2
- 0342380091
- A 35 ns 16 K PROM
- February
- Wallace R K, Learn A J and Schuette K W 1980 A 35 ns 16 K PROM ISSCC Dig. Tech. Pap. (February) 148
- (1980) ISSCC Dig. Tech. Pap. , pp. 148
- Wallace, R.K.¹ Learn, A.J.² Schuette, K.W.³

3
- 84939334093
- A 40 ns junction-shorting PROM
- February
- Fukushima T, Ueno K, Matsuzaki Y and Tanaka K 1983 A 40 ns junction-shorting PROM ISSCC Dig. Tech. Pap. (February) 172
- (1983) ISSCC Dig. Tech. Pap. , pp. 172
- Fukushima, T.¹ Ueno, K.² Matsuzaki, Y.³ Tanaka, K.⁴

4
- 0342380099
- Amorphous silicon antifuse technology for bipolar PROMs
- October
- Cook B and Keller S 1986 Amorphous silicon antifuse technology for bipolar PROMs Proc. IEEE Bipolar Circuits Tech. Meet. (October) p 99
- (1986) Proc. IEEE Bipolar Circuits Tech. Meet. , pp. 99
- Cook, B.¹ Keller, S.²

5
- 0024169876
- Dielectric based antifuses for logic and memory ICs
- Hamdy E, McCollum J, Chen S, Chiang S, Eltoukhy S, Chang J, Speers T and Moshen A 1988 Dielectric based antifuses for logic and memory ICs IEEE IEDM Tech. Dig. 780
- (1988) IEEE IEDM Tech. Dig. , pp. 780
- Hamdy, E.¹ McCollum, J.² Chen, S.³ Chiang, S.⁴ Eltoukhy, S.⁵ Chang, J.⁶ Speers, T.⁷ Moshen, A.⁸

6
- 85067057482
- Interconnection devices for field programmable gate arrays
- Hu C 1992 Interconnection devices for field programmable gate arrays IEEE IEDM Tech. Dig. 591
- (1992) IEEE IEDM Tech. Dig. , pp. 591
- Hu, C.¹

7
- 0028737554
- Most promising metal-to-metal antifuse based from 10 nm thick p-SiN film for high density and high speed FPGA application
- Tamura Y and Shinriki H 1994 Most promising metal-to-metal antifuse based from 10 nm thick p-SiN film for high density and high speed FPGA application IEEE IEDM Tech. Dig. 285
- (1994) IEEE IEDM Tech. Dig. , pp. 285
- Tamura, Y.¹ Shinriki, H.²

8
- 0028423603
- Characteristics voltage of programmed metal-to-metal antifuses
- Zhang G, Hu C, Yu P, Chiang S and Hamdy E 1994 Characteristics voltage of programmed metal-to-metal antifuses IEEE Electron Device Lett. 15 (5) 166
- (1994) IEEE Electron Device Lett. , vol.15 , Issue.5 , pp. 166
- Zhang, G.¹ Hu, C.² Yu, P.³ Chiang, S.⁴ Hamdy, E.⁵

9
- 25344434316
- Amorphous silicon anti-fuse for high speed FPGA application
- Jain V, Nariani S R, Boardman C, Chan D, Chang K Y, Gordon K and Wong R 1992 Amorphous silicon anti-fuse for high speed FPGA application IEEE IEDM Tech. Dig. 111
- (1992) IEEE IEDM Tech. Dig. , vol.111
- Jain, V.¹ Nariani, S.R.² Boardman, C.³ Chan, D.⁴ Chang, K.Y.⁵ Gordon, K.⁶ Wong, R.⁷

10
- 0028738032
- Reliable metal-to-metal oxide antifuses
- Zhang G, Hu C, Yu P, Chiang S, Eltoukhy S and Hamdy E 1994 Reliable metal-to-metal oxide antifuses IEEE IEDM Tech. Dig. 281
- (1994) IEEE IEDM Tech. Dig. , pp. 281
- Zhang, G.¹ Hu, C.² Yu, P.³ Chiang, S.⁴ Eltoukhy, S.⁵ Hamdy, E.⁶

11
- 84979183319
- 2
- 2 J. Am. Ceram. Soc. 38 (3) 102
- (1955) J. Am. Ceram. Soc. , vol.38 , Issue.3 , pp. 102
- Rose, D.E.¹ Rey, R.²

12
- 84939319993
- Bristol: Hilger
- Ecclestons W and Uren M 1991 Insulating Films on Semiconductor 1991 (Bristol: Hilger) p 73
- (1991) Insulating Films on Semiconductor 1991 , pp. 73
- Ecclestons, W.¹ Uren, M.²

13
- 36849097956
- 2
- 2 J. Appl. Phys. 40 (1) 278
- (1969) J. Appl. Phys. , vol.40 , Issue.1 , pp. 278
- Lenzlinger, M.¹ Snow, E.H.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.