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Volumn 14, Issue 5, 2014, Pages 2837-2842

Gate-tunable photoemission from graphene transistors

Author keywords

2D crystals; binding energy shifts; gate dielectric; gate tunable; graphene transistor; XPS

Indexed keywords

BINDING ENERGY; ELECTRIC FIELDS; ELECTRIC PROPERTIES; ELECTRON EMISSION; GATE DIELECTRICS; PHOTOELECTRONS; PHOTOEMISSION; PHOTONS; THRESHOLD VOLTAGE; TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84900510120     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl500842y     Document Type: Article
Times cited : (38)

References (48)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.