Doped organic transistors operating in the inversion and depletion regime

Nature Communications

Volumn 4, Issue , 2013, Pages

  Lüssem, Björn ^a   Tietze, Max L ^a   Kleemann, Hans ^a   Hoßbach, Christoph ^a   Bartha, Johann W ^a   Zakhidov, Alexander ^a   Leo, Karl ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COST-BENEFIT ANALYSIS; ELECTRONIC EQUIPMENT; SOFTWARE; TECHNOLOGICAL DEVELOPMENT; THRESHOLD;

ARTICLE; BIOTECHNOLOGY; CONCENTRATION (PARAMETERS); ELECTRIC POTENTIAL; ELECTRONICS; LIGHT EMITTING DIODE; ORGANIC DEPLETION TRANSISTOR; ORGANIC INVERSION TRANSISTOR; SEMICONDUCTOR; THICKNESS;

EID: 84889598392     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms3775     Document Type: Article

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