Achieve high-quality InGaN/GaN multiple quantum wells on La 0.3Sr1.7AlTaO6 substrates

Materials Letters

Volumn 128, Issue , 2014, Pages 27-30

  Wang, Wenliang ^a   Liu, Zuolian ^a   Yang, Weijia ^a   Lin, Yunhao ^a   Zhou, Shizhong ^a   Qian, Huirong ^a   Li, Guoqiang ^a  

^a SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Epitaxial growth; InGaN GaN; Structural; Thin films; X ray techniques

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

ALTERNATIVE SUBSTRATES; HIGH-RESOLUTION X-RAY DIFFRACTION; INGAN/GAN; OPTOELECTRONIC PROPERTIES; RADIO-FREQUENCY MOLECULAR BEAM EPITAXIES; STRUCTURAL; STRUCTURAL AND OPTICAL PROPERTIES; X-RAY TECHNIQUES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84899998212     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2014.04.100     Document Type: Article

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