SCOPUS 정보 검색 플랫폼

Volumn 103, Issue 3, 2013, Pages

Effect of indium composition on carrier escape in InGaN/GaN multiple quantum well solar cells

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DECAY; CARRIER ESCAPES; CRYSTALLINE QUALITY; FILL FACTOR; OPERATING RANGES; QUANTUM WELL SOLAR CELLS; RECOMBINATION TIME; TUNNELING TIME;

SOLAR CELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84881512839 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4813623 Document Type: Article

Times cited : (30)

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