Anisotropy of in incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth

Applied Physics Letters

Volumn 94, Issue 14, 2009, Pages

  Polyakov, A Y ^a   Govorkov, A V ^a   Smirnov, N B ^a   Markov, A V ^a   Lee, In Hwan ^b   Ju, Jin Woo ^b   Pearton, S J ^c  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b Chonbuk National University   (South Korea)

^c J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL LATERAL OVERGROWTHS; GAN/INGAN; LONG WAVELENGTHS; MICRO CATHODOLUMINESCENCES; MULTI-QUANTUM WELLS; MULTIQUANTUM WELL STRUCTURES; RED SHIFTS; RED-SHIFTED; SHORT WAVELENGTHS;

EPITAXIAL GROWTH;

SEMICONDUCTOR QUANTUM WELLS;

EID: 64349116292     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3115807     Document Type: Article

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