New oxide crystal (La,Sr)(Al,Ta)O3 as substrate for GaN epitaxy

Journal of Crystal Growth

Volumn 237-239, Issue 1 4 II, 2002, Pages 1118-1123

  Lukasiewicz T ^a   Swirkowicz M ^a   Sakowska, H ^a   Turos, A ^a   Leszczynski M ^b   Ratajczak, R ^c  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

Author keywords

A1. Substrates; A2. Czochralski method; B1. Oxides; B1. Perovskites

Indexed keywords

CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY; GALLIUM NITRIDE; PEROVSKITE; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; THERMAL CONDUCTIVITY; THERMAL EXPANSION; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL LAYERS;

CRYSTAL GROWTH FROM MELT;

EID: 18344403964     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02066-8     Document Type: Article

References (9)

1. Alternative oxide substrates for GaN heteroepitaxy
2. 3
3. 3 (1 0 1)