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Volumn 59, Issue 10, 2011, Pages 3759-3769
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Effects of stress on phase separation in InxGa1- xN/GaN multiple quantum-wells
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Author keywords
Electron energy loss spectroscopy (EELS); Nitrides; Scanning transmission electron microscopy (STEM); Spinoidal
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Indexed keywords
AS-GROWN;
ATOMIC-RESOLUTION;
GAN/SAPPHIRE;
HIGH-ANGLE ANNULAR DARK FIELDS;
HIGH-RESOLUTION X-RAY DIFFRACTION;
HRXRD;
LATERAL DIRECTIONS;
LINE SCAN;
METALORGANIC CHEMICAL VAPOR DEPOSITION;
MULTIPLE QUANTUM WELLS;
PEAK EMISSIONS;
RECIPROCAL SPACE MAPPING;
RED SHIFT;
SCANNING TRANSMISSION ELECTRON MICROSCOPY;
SCANNING/TRANSMISSION ELECTRON MICROSCOPY (STEM);
SPINOIDAL;
VERTICAL DIRECTION;
WELL WIDTH;
DISSOCIATION;
ELECTRON EMISSION;
ELECTRON ENERGY LEVELS;
ELECTRON MICROSCOPY;
ELECTRON SCATTERING;
ELECTRONS;
ENERGY DISSIPATION;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
INDIUM;
MAPPING;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
NITRIDES;
NUCLEAR INSTRUMENTATION;
ORGANIC CHEMICALS;
PHASE SEPARATION;
SEMICONDUCTOR QUANTUM WELLS;
WELLS;
X RAY DIFFRACTION;
X RAY DIFFRACTION ANALYSIS;
ELECTRON ENERGY LOSS SPECTROSCOPY;
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EID: 79955554731
PISSN: 13596454
EISSN: None
Source Type: Journal
DOI: 10.1016/j.actamat.2010.11.020 Document Type: Article |
Times cited : (15)
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References (34)
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