Electro-optical effect in hydrogenated amorphous silicon-based waveguide-integrated p-i-p and p-i-n configurations

Optical Engineering

Volumn 52, Issue 8, 2013, Pages

  Rao, Sandro ^a   Coppola, Giuseppe ^b   Summonte, Caterina ^c   Gioffrè, Mariano Antonio ^b   Della Corte, Francesco Giuseppe ^a  

^a UNIVERSITY MEDITERRANEA OF REGGIO CALABRIA   (Italy)

^b CNR IMM   (Italy)

^c CNR Consiglio Nazionale delle Ricerche   (Italy)

Author keywords

electro optics; integrated optics; optical devices; photonics

Indexed keywords

FABRY-PEROT INTERFEROMETERS; HYDROGENATION; INTEGRATED OPTICS; LIGHT MODULATORS; MODULATORS; OPTICAL DEVICES; PHOTONICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; TEMPERATURE; WAVEGUIDES;

BACK-END INTEGRATION; ELECTROOPTICAL MODULATORS; FACTOR OF MERITS; HYDROGENATED AMORPHOUS SILICON (A-SI:H); INTEGRATED FABRY-PEROT; LOW TEMPERATURES; P-I-N STRUCTURE; SILICON SUBSTRATES;

AMORPHOUS SILICON;

EID: 84899751866     PISSN: 00913286     EISSN: 15602303     Source Type: Journal    
DOI: 10.1117/1.OE.52.8.087110     Document Type: Article

References (24)

1. R. Soref and B. R. Bennett, "Electrooptical effects in silicon," IEEE J. Quantum Electron. 23(1), 123-129 (1987).
2. Q. Xu et al., "12.5 Gbits carrier-injection-based silicon micro-ring silicon modulators," Opt. Express 15(2), 430-436 (2007).
3. D. Marris-Morini et al., "Optical modulation by carrier depletion in a silicon PIN diode," Opt. Express 14(22), 10838-10843 (2006).
4. D. J. Thomson et al., "50-Gbs silicon optical modulator," IEEE Photonics Technol. Lett. 24(4), 234-236 (2012).
5. F. G. Della Corte and S. Rao, "Use of amorphous silicon for active photonic devices," IEEE Trans. Electron Devices 60(5), 1495-1505 (2013).
6. G. Cocorullo et al., "Amorphous silicon waveguides and light modulators for integrated photonics realized by low-temperature plasma enhanced chemical vapour deposition," Opt. Lett. 21(24), 2002-2004 (1996).
7. D. K. Sparacin et al., "Low loss amorphous silicon channel waveguides for integrated photonics," in Proc. of 3rd IEEE Int. Conf. Group IV Photonics, pp. 255-257 (2006).
8. B. Han et al., "Comparison of optical passive integrated devices based on three materials for optical clock distribution," in Proc. ECIO 07, pp. 1-4, Copenhagen, Denmark (2007).
9. A. Khanna et al., "Amorphous silicon optical waveguides and Bragg mirrors," Proc. SPIE 6996, 699605 (2008).
10. S. K. Selvaraja et al., "Low-loss amorphous silicon-on-insulator technology for photonic integrated circuitry," Opt. Commun. 282(9), 1767-1770 (2009).
11. R. Sun et al., "Transparent amorphous silicon channel waveguides with silicon nitride intercladding layer," Appl. Phys. Lett. 94(14), 141108 (2009).
12. S. Rao, F. G. Della Corte, and C. Summonte, "Low-loss amorphous silicon waveguides grown by PECVD on indium tin oxide," J. Eur. Opt. Soc. Rapid Publ. 5, 10039s (2010).
13. S. Y. Zhu, G. Q. Lo, and D. L. Kwong, "Low-loss amorphous silicon wire waveguide for integrated photonics: effect of fabrication process and the thermal stability," Opt. Express 18(24), 25283-25291 (2010).
14. S. Rao, F. G. Della Corte, and C. Summonte, "Amorphous silicon waveguides grown by PECVD on an Indium Tin Oxide buried contact," Opt. Commun. 285(13-14), 3088-3092 (2012).
15. T. Lipka et al., "Low-loss multilayer compatible a-Si:H optical thin films for photonic applications," J. Eur. Opt. Soc. Rapid Publ. 7, 12023 (2012).
16. S. Zhu et al., "Effect of cladding layer and subsequent heat treatment on hydrogenated amorphous silicon waveguides," Opt. Express 20(21), 23676-23683 (2012).
17. S. Rao et al., "Electro-optical modulating device based on a CMOScompatible a-Si:H/a-SiCN multistack waveguide," IEEE J. Sel. Top. Quantum Electron. 16(1), 173-178 (2010).
18. F. G. Della Corte et al., "Electro-optical modulation at 1550 nm in an asdeposited hydrogenated amorphous silicon p-i-n waveguiding device," Opt. Express 19(4), 2941-2951 (2011).
19. S. Rao et al., "A 2.5 ns switching time MachZehnder modulator in as-deposited a-Si:H," Opt. Express 20(9), 9351-9356 (2012).
20. S. Rao, C. D'Addio, and F. G. Della Corte, "All-optical modulation in a CMOS-compatible amorphous silicon-based device," J. Eur. Opt. Soc. Rapid Publ. 7, 12023 (2012).
21. S. Rao et al., "Hydrogenated amorphous silicon multi-SOI waveguide modulator with low voltage-length product," Opt. Laser Technol. 45, 204-208 (2013).
22. P. Viktorovitch and G. Moddel, "Interpretation of the conductance and capacitance frequency dependence of hydrogenated amorphous silicon Schottky barrier diodes," J. Appl. Phys. 51(9), 4847-4854 (1980).
23. F. G. Della Corte, A. Rubino, and G. Cocorullo, "Simulation study and realisation of an -Si:H emitter on GaAs," Solid-State Electron. 42(10), 1819-1825 (1998).
24. J. Singh, "Effective mass of charge carriers in amorphous semiconductors and its applications," J. Non Cryst. Solids 299-302(1), 444-448 (2002).