Electro-optical modulation at 1550 nm in an asdeposited hydrogenated amorphous silicon p-i-n waveguiding device

Optics Express

Volumn 19, Issue 4, 2011, Pages 2941-2951

  Della Corte, Francesco G ^a   Rao, Sandro ^a   Coppola, Giuseppe ^b   Summonte, Caterina ^c  

^a UNIVERSITY MEDITERRANEA OF REGGIO CALABRIA   (Italy)

^b CNR IMM   (Italy)

^c CNR Consiglio Nazionale delle Ricerche   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; FABRY-PEROT INTERFEROMETERS; HYDROGENATION; LIGHT MODULATION; OPTICAL PROPERTIES; PHASE MODULATION; RESONATORS; SILICON CARBIDE; SILICON OXIDES; WAVEGUIDES;

1550 NM; A-SI:H; AMORPHOUS SILICON CARBIDE (A-SIC:H); CLADDING LAYER; CMOS PROCESSS; ELECTRO-OPTICAL MODULATION; ELECTROOPTICAL PROPERTIES; FABRICATION PROCESS; HIGHEST TEMPERATURE; HYDROGENATED AMORPHOUS SILICON; HYDROGENATED AMORPHOUS SILICON (A-SI:H); INTEGRATED FABRY-PEROT; OPTICAL ELEMENTS; PHOTONIC INTEGRATED CIRCUITS; RING RESONATOR; SWITCH-ON; TECHNOLOGICAL COMPATIBILITY; WAVE-GUIDING; WAVEGUIDING STRUCTURES;

AMORPHOUS SILICON;

EID: 79951589469     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.002941     Document Type: Article

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