Effect of cladding layer and subsequent heat treatment on hydrogenated amorphous silicon waveguides

Optics Express

Volumn 20, Issue 21, 2012, Pages 23676-23683

  Zhu, Shiyang ^a   Lo, G Q ^a   Li, Weihong ^a   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HYDROGENATION; OPTICAL WAVEGUIDES; THERMODYNAMIC STABILITY; TRANSPARENCY; WAVEGUIDES;

A-SI:H; ANNEALING TEMPERATURES; ANNEALING TIME; BONDED HYDROGEN; CLADDING LAYER; ELEVATED TEMPERATURE; HYDROGENATED AMORPHOUS SILICON (A-SI:H); LOW PROPAGATION LOSS; SURFACE PASSIVATION; TRANSVERSE ELECTRIC MODES; WAVEGUIDE CORE; WIRE WAVE GUIDES;

SILICON;

HYDROGEN; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; EQUIPMENT FAILURE; HEAT; MATERIALS TESTING; REFRACTOMETRY; SURFACE PLASMON RESONANCE;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; HOT TEMPERATURE; HYDROGEN; MATERIALS TESTING; REFRACTOMETRY; SILICON DIOXIDE; SURFACE PLASMON RESONANCE;

EID: 84867291419     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.023676     Document Type: Article

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